Sidewall patterning - A new wafer-scale method for accurate patterning of vertical silicon structures

P. J. Westerik, W. J.C. Vijselaar, J. W. Berenschot, N. R. Tas (Corresponding Author), J. Huskens, J. G.E. Gardeniers

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)
10 Downloads (Pure)

Abstract

For the definition of wafer scale micro- and nanostructures, in-plane geometry is usually controlled by optical lithography. However, options for precisely patterning structures in the out-of-plane direction are much more limited. In this paper we present a versatile self-aligned technique that allows for reproducible sub-micrometer resolution local modification along vertical silicon sidewalls. Instead of optical lithography, this method makes smart use of inclined ion beam etching to selectively etch the top parts of structures, and controlled retraction of a conformal layer to define a hard mask in the vertical direction. The top, bottom or middle part of a structure could be selectively exposed, and it was shown that these exposed regions can, for example, be selectively covered with a catalyst, doped, or structured further.

Original languageEnglish
Article number015008
JournalJournal of micromechanics and microengineering
Volume28
Issue number1
Early online date12 Dec 2017
DOIs
Publication statusPublished - 1 Jan 2018

Fingerprint

Photolithography
Silicon
Ion beams
Masks
Etching
Nanostructures
Microstructure
Catalysts
Geometry
Direction compound

Keywords

  • Corner lithography
  • Microfabrication
  • Nanofabrication
  • Nanotechnology
  • Retraction edge lithography
  • Wafer scale

Cite this

@article{790cd3b58aa1466cb7a906d7c0c73696,
title = "Sidewall patterning - A new wafer-scale method for accurate patterning of vertical silicon structures",
abstract = "For the definition of wafer scale micro- and nanostructures, in-plane geometry is usually controlled by optical lithography. However, options for precisely patterning structures in the out-of-plane direction are much more limited. In this paper we present a versatile self-aligned technique that allows for reproducible sub-micrometer resolution local modification along vertical silicon sidewalls. Instead of optical lithography, this method makes smart use of inclined ion beam etching to selectively etch the top parts of structures, and controlled retraction of a conformal layer to define a hard mask in the vertical direction. The top, bottom or middle part of a structure could be selectively exposed, and it was shown that these exposed regions can, for example, be selectively covered with a catalyst, doped, or structured further.",
keywords = "Corner lithography, Microfabrication, Nanofabrication, Nanotechnology, Retraction edge lithography, Wafer scale",
author = "Westerik, {P. J.} and Vijselaar, {W. J.C.} and Berenschot, {J. W.} and Tas, {N. R.} and J. Huskens and Gardeniers, {J. G.E.}",
year = "2018",
month = "1",
day = "1",
doi = "10.1088/1361-6439/aa9c20",
language = "English",
volume = "28",
journal = "Journal of micromechanics and microengineering",
issn = "0960-1317",
publisher = "IOP Publishing Ltd.",
number = "1",

}

Sidewall patterning - A new wafer-scale method for accurate patterning of vertical silicon structures. / Westerik, P. J.; Vijselaar, W. J.C.; Berenschot, J. W.; Tas, N. R. (Corresponding Author); Huskens, J.; Gardeniers, J. G.E.

In: Journal of micromechanics and microengineering, Vol. 28, No. 1, 015008, 01.01.2018.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Sidewall patterning - A new wafer-scale method for accurate patterning of vertical silicon structures

AU - Westerik, P. J.

AU - Vijselaar, W. J.C.

AU - Berenschot, J. W.

AU - Tas, N. R.

AU - Huskens, J.

AU - Gardeniers, J. G.E.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - For the definition of wafer scale micro- and nanostructures, in-plane geometry is usually controlled by optical lithography. However, options for precisely patterning structures in the out-of-plane direction are much more limited. In this paper we present a versatile self-aligned technique that allows for reproducible sub-micrometer resolution local modification along vertical silicon sidewalls. Instead of optical lithography, this method makes smart use of inclined ion beam etching to selectively etch the top parts of structures, and controlled retraction of a conformal layer to define a hard mask in the vertical direction. The top, bottom or middle part of a structure could be selectively exposed, and it was shown that these exposed regions can, for example, be selectively covered with a catalyst, doped, or structured further.

AB - For the definition of wafer scale micro- and nanostructures, in-plane geometry is usually controlled by optical lithography. However, options for precisely patterning structures in the out-of-plane direction are much more limited. In this paper we present a versatile self-aligned technique that allows for reproducible sub-micrometer resolution local modification along vertical silicon sidewalls. Instead of optical lithography, this method makes smart use of inclined ion beam etching to selectively etch the top parts of structures, and controlled retraction of a conformal layer to define a hard mask in the vertical direction. The top, bottom or middle part of a structure could be selectively exposed, and it was shown that these exposed regions can, for example, be selectively covered with a catalyst, doped, or structured further.

KW - Corner lithography

KW - Microfabrication

KW - Nanofabrication

KW - Nanotechnology

KW - Retraction edge lithography

KW - Wafer scale

UR - http://www.scopus.com/inward/record.url?scp=85038607800&partnerID=8YFLogxK

U2 - 10.1088/1361-6439/aa9c20

DO - 10.1088/1361-6439/aa9c20

M3 - Article

VL - 28

JO - Journal of micromechanics and microengineering

JF - Journal of micromechanics and microengineering

SN - 0960-1317

IS - 1

M1 - 015008

ER -