SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

J. J. Zhang; M. Stoffel; A. Rastelli; O. G. Schmidt; V. Jovanović; L. K. Nanver; G. Bauer

doi:10.1063/1.2802555

SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

J. J. Zhang^*, M. Stoffel, A. Rastelli, O. G. Schmidt, V. Jovanović, L. K. Nanver, G. Bauer

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

64 Citations (Scopus)

34 Downloads (Pure)

Abstract

The morphological evolution of both pits and SiGe islands on patterned Si(001) substrates is investigated. With increasing Si buffer layer thickness the patterned holes transform into multifaceted pits before evolving into inverted truncated pyramids. SiGe island formation and evolution are studied by systematically varying the Ge coverage and pit spacing and quantitative data on the influence of the pattern periodicity on the SiGe island volume are presented. The presence of pits allows the fabrication of uniform island arrays with any of their equilibrium shapes.

Original language	English
Article number	173115
Number of pages	3
Journal	Applied physics letters
Volume	91
Issue number	17
DOIs	https://doi.org/10.1063/1.2802555
Publication status	Published - 1 Nov 2007
Externally published	Yes

Access to Document

10.1063/1.2802555

NanverSiGegrowthFinal published version, 240 KB

Cite this

@article{e2729ce5cb5b4503a9530aba76b0b4e3,

title = "SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening",

abstract = "The morphological evolution of both pits and SiGe islands on patterned Si(001) substrates is investigated. With increasing Si buffer layer thickness the patterned holes transform into multifaceted pits before evolving into inverted truncated pyramids. SiGe island formation and evolution are studied by systematically varying the Ge coverage and pit spacing and quantitative data on the influence of the pattern periodicity on the SiGe island volume are presented. The presence of pits allows the fabrication of uniform island arrays with any of their equilibrium shapes.",

author = "Zhang, {J. J.} and M. Stoffel and A. Rastelli and Schmidt, {O. G.} and V. Jovanovi{\'c} and Nanver, {L. K.} and G. Bauer",

year = "2007",

month = nov,

day = "1",

doi = "10.1063/1.2802555",

language = "English",

volume = "91",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - SiGe growth on patterned Si(001) substrates

T2 - Surface evolution and evidence of modified island coarsening

AU - Zhang, J. J.

AU - Stoffel, M.

AU - Rastelli, A.

AU - Schmidt, O. G.

AU - Jovanović, V.

AU - Nanver, L. K.

AU - Bauer, G.

PY - 2007/11/1

Y1 - 2007/11/1

N2 - The morphological evolution of both pits and SiGe islands on patterned Si(001) substrates is investigated. With increasing Si buffer layer thickness the patterned holes transform into multifaceted pits before evolving into inverted truncated pyramids. SiGe island formation and evolution are studied by systematically varying the Ge coverage and pit spacing and quantitative data on the influence of the pattern periodicity on the SiGe island volume are presented. The presence of pits allows the fabrication of uniform island arrays with any of their equilibrium shapes.

AB - The morphological evolution of both pits and SiGe islands on patterned Si(001) substrates is investigated. With increasing Si buffer layer thickness the patterned holes transform into multifaceted pits before evolving into inverted truncated pyramids. SiGe island formation and evolution are studied by systematically varying the Ge coverage and pit spacing and quantitative data on the influence of the pattern periodicity on the SiGe island volume are presented. The presence of pits allows the fabrication of uniform island arrays with any of their equilibrium shapes.

UR - http://www.scopus.com/inward/record.url?scp=35549002618&partnerID=8YFLogxK

U2 - 10.1063/1.2802555

DO - 10.1063/1.2802555

M3 - Article

AN - SCOPUS:35549002618

SN - 0003-6951

VL - 91

JO - Applied physics letters

JF - Applied physics letters

IS - 17

M1 - 173115

ER -

SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

Abstract

Access to Document

Other files and links

Fingerprint

Cite this