SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion

G. Lorito*, V. Gonda, T. L.M. Scholtes, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Abstract

In this work we present a novel self-aligned emitter-base structure featuring an implanted and laser-annealed emitter region. Using electrical measurements on SiGe NPN HBTs, it is shown that such a process completely eliminates the TED-induced out-diffusion of the boron in the base region while also achieving an ultra-shallow abrupt emitter-base junction and very low emitter contact resistance.

Original languageEnglish
Title of host publication2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008
PublisherIEEE
Pages291-294
Number of pages4
ISBN (Electronic)978-1-4244-1882-4
ISBN (Print)978-1-4244-1881-7
DOIs
Publication statusPublished - 19 Sep 2008
Externally publishedYes
Event26th International Conference on Microelectronics, MIEL 2008 - Nis, Serbia
Duration: 11 May 200814 May 2008

Conference

Conference26th International Conference on Microelectronics, MIEL 2008
Abbreviated titleMIEL 2008
CountrySerbia
CityNis
Period11/05/0814/05/08

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