SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion

G. Lorito; V. Gonda; T. L.M. Scholtes; L. K. Nanver

doi:10.1109/ICMEL.2008.4559281

SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion

G. Lorito^*, V. Gonda, T. L.M. Scholtes, L. K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Citations (Scopus)

Abstract

In this work we present a novel self-aligned emitter-base structure featuring an implanted and laser-annealed emitter region. Using electrical measurements on SiGe NPN HBTs, it is shown that such a process completely eliminates the TED-induced out-diffusion of the boron in the base region while also achieving an ultra-shallow abrupt emitter-base junction and very low emitter contact resistance.

Original language	English
Title of host publication	2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008
Publisher	IEEE
Pages	291-294
Number of pages	4
ISBN (Electronic)	978-1-4244-1882-4
ISBN (Print)	978-1-4244-1881-7
DOIs	https://doi.org/10.1109/ICMEL.2008.4559281
Publication status	Published - 19 Sept 2008
Externally published	Yes
Event	26th International Conference on Microelectronics, MIEL 2008 - Nis, Serbia Duration: 11 May 2008 → 14 May 2008

Conference

Conference	26th International Conference on Microelectronics, MIEL 2008
Abbreviated title	MIEL 2008
Country/Territory	Serbia
City	Nis
Period	11/05/08 → 14/05/08

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10.1109/ICMEL.2008.4559281

Cite this

@inproceedings{1bfd5a2bef63434f86bf25fb032048c8,

title = "SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion",

abstract = "In this work we present a novel self-aligned emitter-base structure featuring an implanted and laser-annealed emitter region. Using electrical measurements on SiGe NPN HBTs, it is shown that such a process completely eliminates the TED-induced out-diffusion of the boron in the base region while also achieving an ultra-shallow abrupt emitter-base junction and very low emitter contact resistance.",

author = "G. Lorito and V. Gonda and Scholtes, {T. L.M.} and Nanver, {L. K.}",

year = "2008",

month = sep,

day = "19",

doi = "10.1109/ICMEL.2008.4559281",

language = "English",

isbn = "978-1-4244-1881-7",

pages = "291--294",

booktitle = "2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008",

publisher = "IEEE",

address = "United States",

note = "26th International Conference on Microelectronics, MIEL 2008, MIEL 2008 ; Conference date: 11-05-2008 Through 14-05-2008",

}

Lorito, G, Gonda, V, Scholtes, TLM & Nanver, LK 2008, SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion. in 2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008., 4559281, IEEE, pp. 291-294, 26th International Conference on Microelectronics, MIEL 2008, Nis, Serbia, 11/05/08. https://doi.org/10.1109/ICMEL.2008.4559281

SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion. / Lorito, G.; Gonda, V.; Scholtes, T. L.M. et al.
2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008. IEEE, 2008. p. 291-294 4559281.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion

AU - Lorito, G.

AU - Gonda, V.

AU - Scholtes, T. L.M.

AU - Nanver, L. K.

PY - 2008/9/19

Y1 - 2008/9/19

N2 - In this work we present a novel self-aligned emitter-base structure featuring an implanted and laser-annealed emitter region. Using electrical measurements on SiGe NPN HBTs, it is shown that such a process completely eliminates the TED-induced out-diffusion of the boron in the base region while also achieving an ultra-shallow abrupt emitter-base junction and very low emitter contact resistance.

AB - In this work we present a novel self-aligned emitter-base structure featuring an implanted and laser-annealed emitter region. Using electrical measurements on SiGe NPN HBTs, it is shown that such a process completely eliminates the TED-induced out-diffusion of the boron in the base region while also achieving an ultra-shallow abrupt emitter-base junction and very low emitter contact resistance.

U2 - 10.1109/ICMEL.2008.4559281

DO - 10.1109/ICMEL.2008.4559281

M3 - Conference contribution

AN - SCOPUS:51749117828

SN - 978-1-4244-1881-7

SP - 291

EP - 294

BT - 2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008

PB - IEEE

T2 - 26th International Conference on Microelectronics, MIEL 2008

Y2 - 11 May 2008 through 14 May 2008

ER -

SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion

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