SILC in MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material

V.E. Houtsma, J. Holleman, Cora Salm, P.H. Woerlee

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    Abstract

    In this paper the DC-SILC characteristics of n+ and p+ poly-Si and poly-SiGe MOS capacitors are studied for substrate(+Vg) and gate-injection(−Vg) conditions. P+ and n+-gates with poly silicon (poly-Si) and poly Silicon-Germanium (poly Si−0.7Ge0.3) were used to study the influence of the gate workfunction on gate current and SILC currents. For n+ poly-SiGe, reduced poly depletion and no significant difference in SILC characteristics compared to n+ poly-Si gate devices is observed. For p+ gate devices asymmetric SILC and reduced SILC for poly-SiGe is observed.
    Original languageUndefined
    Pages (from-to)415-418
    Number of pages4
    JournalMicroelectronic engineering
    Volume1999
    Issue number48
    DOIs
    Publication statusPublished - 1999

    Keywords

    • METIS-111616
    • IR-74012

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