SILC in MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material

V.E. Houtsma; J. Holleman; Cora Salm; P.H. Woerlee

doi:10.1016/S0167-9317(99)00416-5

SILC in MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material

V.E. Houtsma, J. Holleman, Cora Salm, P.H. Woerlee

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Abstract

In this paper the DC-SILC characteristics of n+ and p+ poly-Si and poly-SiGe MOS capacitors are studied for substrate(+Vg) and gate-injection(−Vg) conditions. P+ and n+-gates with poly silicon (poly-Si) and poly Silicon-Germanium (poly Si−0.7Ge0.3) were used to study the influence of the gate workfunction on gate current and SILC currents. For n+ poly-SiGe, reduced poly depletion and no significant difference in SILC characteristics compared to n+ poly-Si gate devices is observed. For p+ gate devices asymmetric SILC and reduced SILC for poly-SiGe is observed.

Original language	Undefined
Pages (from-to)	415-418
Number of pages	4
Journal	Microelectronic engineering
Volume	1999
Issue number	48
DOIs	https://doi.org/10.1016/S0167-9317(99)00416-5
Publication status	Published - 1999

Keywords

METIS-111616
IR-74012

Access to Document

10.1016/S0167-9317(99)00416-5

Cite this

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title = "SILC in MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material",

abstract = "In this paper the DC-SILC characteristics of n+ and p+ poly-Si and poly-SiGe MOS capacitors are studied for substrate(+Vg) and gate-injection(−Vg) conditions. P+ and n+-gates with poly silicon (poly-Si) and poly Silicon-Germanium (poly Si−0.7Ge0.3) were used to study the influence of the gate workfunction on gate current and SILC currents. For n+ poly-SiGe, reduced poly depletion and no significant difference in SILC characteristics compared to n+ poly-Si gate devices is observed. For p+ gate devices asymmetric SILC and reduced SILC for poly-SiGe is observed.",

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author = "V.E. Houtsma and J. Holleman and Cora Salm and P.H. Woerlee",

year = "1999",

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volume = "1999",

pages = "415--418",

journal = "Microelectronic engineering",

issn = "0167-9317",

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TY - JOUR

T1 - SILC in MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material

AU - Houtsma, V.E.

AU - Holleman, J.

AU - Salm, Cora

AU - Woerlee, P.H.

PY - 1999

Y1 - 1999

N2 - In this paper the DC-SILC characteristics of n+ and p+ poly-Si and poly-SiGe MOS capacitors are studied for substrate(+Vg) and gate-injection(−Vg) conditions. P+ and n+-gates with poly silicon (poly-Si) and poly Silicon-Germanium (poly Si−0.7Ge0.3) were used to study the influence of the gate workfunction on gate current and SILC currents. For n+ poly-SiGe, reduced poly depletion and no significant difference in SILC characteristics compared to n+ poly-Si gate devices is observed. For p+ gate devices asymmetric SILC and reduced SILC for poly-SiGe is observed.

AB - In this paper the DC-SILC characteristics of n+ and p+ poly-Si and poly-SiGe MOS capacitors are studied for substrate(+Vg) and gate-injection(−Vg) conditions. P+ and n+-gates with poly silicon (poly-Si) and poly Silicon-Germanium (poly Si−0.7Ge0.3) were used to study the influence of the gate workfunction on gate current and SILC currents. For n+ poly-SiGe, reduced poly depletion and no significant difference in SILC characteristics compared to n+ poly-Si gate devices is observed. For p+ gate devices asymmetric SILC and reduced SILC for poly-SiGe is observed.

KW - METIS-111616

KW - IR-74012

U2 - 10.1016/S0167-9317(99)00416-5

DO - 10.1016/S0167-9317(99)00416-5

M3 - Article

SN - 0167-9317

VL - 1999

SP - 415

EP - 418

JO - Microelectronic engineering

JF - Microelectronic engineering

IS - 48

ER -