Silicide-to-silicon specific contact resistance characterization

N. Stavitski

Research output: ThesisPhD Thesis - Research UT, graduation UTAcademic

371 Downloads (Pure)

Abstract

The performance of Si integrated circuits depends on the transistor drive current. The drive current of a MOS transistor is determined by the total device resistance, which consists of the channel resistance and the parasitic resistances associated with dopant diffusion areas and contacts. It is expected that the contact resistance between silicide and source/drain regions will significantly contribute to the total series resistance. The reduction of this contact resistance and the corresponding specific contact resistance is an important issue. Thus the ability to accurately obtain the specific silicide-to-silicon contact resistance is essential for contact processing. It therefore requires dedicated test structures and a reliable extraction method of this specific contact resistance.
Original languageEnglish
Awarding Institution
  • University of Twente
Supervisors/Advisors
  • Wolters, Robertus Adrianus Maria, Supervisor
  • Kovalgin, Alexey Y., Advisor
Thesis sponsors
Award date3 Dec 2009
Place of PublicationEindhoven
Publisher
Print ISBNs978-90-365-2939-6
DOIs
Publication statusPublished - 3 Dec 2009

Fingerprint

Contact resistance
Silicon
MOSFET devices
Integrated circuits
Transistors
Doping (additives)
Processing

Keywords

  • METIS-265786
  • EWI-17410
  • SC-ICF: Integrated Circuit Fabrication
  • IR-69803

Cite this

Stavitski, N.. / Silicide-to-silicon specific contact resistance characterization. Eindhoven : University of Twente, 2009. 127 p.
@phdthesis{632544c32b394613b35d89274b7f4e9c,
title = "Silicide-to-silicon specific contact resistance characterization",
abstract = "The performance of Si integrated circuits depends on the transistor drive current. The drive current of a MOS transistor is determined by the total device resistance, which consists of the channel resistance and the parasitic resistances associated with dopant diffusion areas and contacts. It is expected that the contact resistance between silicide and source/drain regions will significantly contribute to the total series resistance. The reduction of this contact resistance and the corresponding specific contact resistance is an important issue. Thus the ability to accurately obtain the specific silicide-to-silicon contact resistance is essential for contact processing. It therefore requires dedicated test structures and a reliable extraction method of this specific contact resistance.",
keywords = "METIS-265786, EWI-17410, SC-ICF: Integrated Circuit Fabrication, IR-69803",
author = "N. Stavitski",
note = "eemcs-eprint-17410",
year = "2009",
month = "12",
day = "3",
doi = "10.3990/1.9789036529396",
language = "English",
isbn = "978-90-365-2939-6",
publisher = "University of Twente",
address = "Netherlands",
school = "University of Twente",

}

Silicide-to-silicon specific contact resistance characterization. / Stavitski, N.

Eindhoven : University of Twente, 2009. 127 p.

Research output: ThesisPhD Thesis - Research UT, graduation UTAcademic

TY - THES

T1 - Silicide-to-silicon specific contact resistance characterization

AU - Stavitski, N.

N1 - eemcs-eprint-17410

PY - 2009/12/3

Y1 - 2009/12/3

N2 - The performance of Si integrated circuits depends on the transistor drive current. The drive current of a MOS transistor is determined by the total device resistance, which consists of the channel resistance and the parasitic resistances associated with dopant diffusion areas and contacts. It is expected that the contact resistance between silicide and source/drain regions will significantly contribute to the total series resistance. The reduction of this contact resistance and the corresponding specific contact resistance is an important issue. Thus the ability to accurately obtain the specific silicide-to-silicon contact resistance is essential for contact processing. It therefore requires dedicated test structures and a reliable extraction method of this specific contact resistance.

AB - The performance of Si integrated circuits depends on the transistor drive current. The drive current of a MOS transistor is determined by the total device resistance, which consists of the channel resistance and the parasitic resistances associated with dopant diffusion areas and contacts. It is expected that the contact resistance between silicide and source/drain regions will significantly contribute to the total series resistance. The reduction of this contact resistance and the corresponding specific contact resistance is an important issue. Thus the ability to accurately obtain the specific silicide-to-silicon contact resistance is essential for contact processing. It therefore requires dedicated test structures and a reliable extraction method of this specific contact resistance.

KW - METIS-265786

KW - EWI-17410

KW - SC-ICF: Integrated Circuit Fabrication

KW - IR-69803

U2 - 10.3990/1.9789036529396

DO - 10.3990/1.9789036529396

M3 - PhD Thesis - Research UT, graduation UT

SN - 978-90-365-2939-6

PB - University of Twente

CY - Eindhoven

ER -