Silicide-to-silicon specific contact resistance characterization

N. Stavitski

    Research output: ThesisPhD Thesis - Research UT, graduation UT

    371 Downloads (Pure)

    Abstract

    The performance of Si integrated circuits depends on the transistor drive current. The drive current of a MOS transistor is determined by the total device resistance, which consists of the channel resistance and the parasitic resistances associated with dopant diffusion areas and contacts. It is expected that the contact resistance between silicide and source/drain regions will significantly contribute to the total series resistance. The reduction of this contact resistance and the corresponding specific contact resistance is an important issue. Thus the ability to accurately obtain the specific silicide-to-silicon contact resistance is essential for contact processing. It therefore requires dedicated test structures and a reliable extraction method of this specific contact resistance.
    Original languageEnglish
    Awarding Institution
    • University of Twente
    Supervisors/Advisors
    • Wolters, Robertus Adrianus Maria, Supervisor
    • Kovalgin, Alexey Y., Advisor
    Thesis sponsors
    Award date3 Dec 2009
    Place of PublicationEindhoven
    Publisher
    Print ISBNs978-90-365-2939-6
    DOIs
    Publication statusPublished - 3 Dec 2009

    Fingerprint

    Contact resistance
    Silicon
    MOSFET devices
    Integrated circuits
    Transistors
    Doping (additives)
    Processing

    Keywords

    • METIS-265786
    • EWI-17410
    • SC-ICF: Integrated Circuit Fabrication
    • IR-69803

    Cite this

    Stavitski, N.. / Silicide-to-silicon specific contact resistance characterization. Eindhoven : University of Twente, 2009. 127 p.
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    abstract = "The performance of Si integrated circuits depends on the transistor drive current. The drive current of a MOS transistor is determined by the total device resistance, which consists of the channel resistance and the parasitic resistances associated with dopant diffusion areas and contacts. It is expected that the contact resistance between silicide and source/drain regions will significantly contribute to the total series resistance. The reduction of this contact resistance and the corresponding specific contact resistance is an important issue. Thus the ability to accurately obtain the specific silicide-to-silicon contact resistance is essential for contact processing. It therefore requires dedicated test structures and a reliable extraction method of this specific contact resistance.",
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    Silicide-to-silicon specific contact resistance characterization. / Stavitski, N.

    Eindhoven : University of Twente, 2009. 127 p.

    Research output: ThesisPhD Thesis - Research UT, graduation UT

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    N2 - The performance of Si integrated circuits depends on the transistor drive current. The drive current of a MOS transistor is determined by the total device resistance, which consists of the channel resistance and the parasitic resistances associated with dopant diffusion areas and contacts. It is expected that the contact resistance between silicide and source/drain regions will significantly contribute to the total series resistance. The reduction of this contact resistance and the corresponding specific contact resistance is an important issue. Thus the ability to accurately obtain the specific silicide-to-silicon contact resistance is essential for contact processing. It therefore requires dedicated test structures and a reliable extraction method of this specific contact resistance.

    AB - The performance of Si integrated circuits depends on the transistor drive current. The drive current of a MOS transistor is determined by the total device resistance, which consists of the channel resistance and the parasitic resistances associated with dopant diffusion areas and contacts. It is expected that the contact resistance between silicide and source/drain regions will significantly contribute to the total series resistance. The reduction of this contact resistance and the corresponding specific contact resistance is an important issue. Thus the ability to accurately obtain the specific silicide-to-silicon contact resistance is essential for contact processing. It therefore requires dedicated test structures and a reliable extraction method of this specific contact resistance.

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    KW - SC-ICF: Integrated Circuit Fabrication

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