Silicon Etching in HNO3/HF Solution: Charge Balance for the Oxidation Reaction

Ernst S. Kooij, K. Butter, J.J. Kelly

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The potential dependence of the current and the etch rate of p- and n-type silicon electrodes in 6 M HNO3–6 M HF solution was investigated. Hydrogen evolved during etching at the open-circuit potential was also measured. These results give insight into the different processes occurring during etching. A detailed charge balance for silicon oxidation in the etchant is deduced.
Original languageUndefined
Pages (from-to)178-180
JournalElectrochemical and solid-state letters
Issue number4
Publication statusPublished - 1999


  • IR-75183

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