Abstract
The potential dependence of the current and the etch rate of p- and n-type silicon electrodes in 6 M HNO3–6 M HF solution was investigated. Hydrogen evolved during etching at the open-circuit potential was also measured. These results give insight into the different processes occurring during etching. A detailed charge balance for silicon oxidation in the etchant is deduced.
Original language | Undefined |
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Pages (from-to) | 178-180 |
Journal | Electrochemical and solid-state letters |
Volume | 2 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1999 |
Keywords
- IR-75183