Silicon Etching in HNO3/HF Solution: Charge Balance for the Oxidation Reaction

Ernst S. Kooij; K. Butter; J.J. Kelly

doi:10.1149/1.1390775

Silicon Etching in HNO3/HF Solution: Charge Balance for the Oxidation Reaction

Ernst S. Kooij
, K. Butter
, J.J. Kelly

University of Twente

Research output: Contribution to journal › Article › Academic

83 Citations (Scopus)

41 Downloads (Pure)

Abstract

The potential dependence of the current and the etch rate of p- and n-type silicon electrodes in 6 M HNO3–6 M HF solution was investigated. Hydrogen evolved during etching at the open-circuit potential was also measured. These results give insight into the different processes occurring during etching. A detailed charge balance for silicon oxidation in the etchant is deduced.

Original language	Undefined
Pages (from-to)	178-180
Journal	Electrochemical and solid-state letters
Volume	2
Issue number	4
DOIs	https://doi.org/10.1149/1.1390775
Publication status	Published - 1999

Keywords

IR-75183

Access to Document

10.1149/1.1390775

Cite this

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title = "Silicon Etching in HNO3/HF Solution: Charge Balance for the Oxidation Reaction",

abstract = "The potential dependence of the current and the etch rate of p- and n-type silicon electrodes in 6 M HNO3–6 M HF solution was investigated. Hydrogen evolved during etching at the open-circuit potential was also measured. These results give insight into the different processes occurring during etching. A detailed charge balance for silicon oxidation in the etchant is deduced.",

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author = "Kooij, \{Ernst S.\} and K. Butter and J.J. Kelly",

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journal = "Electrochemical and solid-state letters",

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T1 - Silicon Etching in HNO3/HF Solution: Charge Balance for the Oxidation Reaction

AU - Kooij, Ernst S.

AU - Butter, K.

AU - Kelly, J.J.

PY - 1999

Y1 - 1999

N2 - The potential dependence of the current and the etch rate of p- and n-type silicon electrodes in 6 M HNO3–6 M HF solution was investigated. Hydrogen evolved during etching at the open-circuit potential was also measured. These results give insight into the different processes occurring during etching. A detailed charge balance for silicon oxidation in the etchant is deduced.

AB - The potential dependence of the current and the etch rate of p- and n-type silicon electrodes in 6 M HNO3–6 M HF solution was investigated. Hydrogen evolved during etching at the open-circuit potential was also measured. These results give insight into the different processes occurring during etching. A detailed charge balance for silicon oxidation in the etchant is deduced.

KW - IR-75183

U2 - 10.1149/1.1390775

DO - 10.1149/1.1390775

M3 - Article

SN - 1099-0062

VL - 2

SP - 178

EP - 180

JO - Electrochemical and solid-state letters

JF - Electrochemical and solid-state letters

IS - 4

ER -