Silicon laser annealing by a two-pulse laser system with variable pulse offsets

V. Gonda*, J. Slabbekoorn, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

Double-pulsed high-power excimer laser annealing is investigated for use as a means of implanted dopant activation. The laser setup incorporates two lasers that allow double pulse laser annealing with pulse offsets much smaller than the repetition of the individual XeCl excimer lasers. In this configuration, the pulse offset can be fine tuned. Sheet resistances are measured and thermal simulations are conducted to study temperature profiles. Results show, that the total laser energy needed for a complete activation increases with the pulse separation. The increase can be compensated by substrate heating. In this way the thermal budget can be tuned with more freedom.

Original languageEnglish
Title of host publication15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007
Pages257-261
Number of pages5
DOIs
Publication statusPublished - 1 Dec 2007
Externally publishedYes
Event15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007 - Catania, Italy
Duration: 2 Oct 20075 Oct 2007
Conference number: 15

Conference

Conference15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007
Abbreviated titleRTP 2007
CountryItaly
CityCatania
Period2/10/075/10/07

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Cite this

Gonda, V., Slabbekoorn, J., & Nanver, L. K. (2007). Silicon laser annealing by a two-pulse laser system with variable pulse offsets. In 15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007 (pp. 257-261). [4383851] https://doi.org/10.1109/RTP.2007.4383851