Silicon laser annealing by a two-pulse laser system with variable pulse offsets

V. Gonda; J. Slabbekoorn; L. K. Nanver

doi:10.1109/RTP.2007.4383851

Silicon laser annealing by a two-pulse laser system with variable pulse offsets

V. Gonda^*, J. Slabbekoorn, L. K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

Abstract

Double-pulsed high-power excimer laser annealing is investigated for use as a means of implanted dopant activation. The laser setup incorporates two lasers that allow double pulse laser annealing with pulse offsets much smaller than the repetition of the individual XeCl excimer lasers. In this configuration, the pulse offset can be fine tuned. Sheet resistances are measured and thermal simulations are conducted to study temperature profiles. Results show, that the total laser energy needed for a complete activation increases with the pulse separation. The increase can be compensated by substrate heating. In this way the thermal budget can be tuned with more freedom.

Original language	English
Title of host publication	15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007
Pages	257-261
Number of pages	5
DOIs	https://doi.org/10.1109/RTP.2007.4383851
Publication status	Published - 1 Dec 2007
Externally published	Yes
Event	15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007 - Catania, Italy Duration: 2 Oct 2007 → 5 Oct 2007 Conference number: 15

Conference

Conference	15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007
Abbreviated title	RTP 2007
Country/Territory	Italy
City	Catania
Period	2/10/07 → 5/10/07

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10.1109/RTP.2007.4383851

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title = "Silicon laser annealing by a two-pulse laser system with variable pulse offsets",

abstract = "Double-pulsed high-power excimer laser annealing is investigated for use as a means of implanted dopant activation. The laser setup incorporates two lasers that allow double pulse laser annealing with pulse offsets much smaller than the repetition of the individual XeCl excimer lasers. In this configuration, the pulse offset can be fine tuned. Sheet resistances are measured and thermal simulations are conducted to study temperature profiles. Results show, that the total laser energy needed for a complete activation increases with the pulse separation. The increase can be compensated by substrate heating. In this way the thermal budget can be tuned with more freedom.",

author = "V. Gonda and J. Slabbekoorn and Nanver, {L. K.}",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/RTP.2007.4383851",

language = "English",

isbn = "1424412277",

pages = "257--261",

booktitle = "15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007",

note = "15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007, RTP 2007 ; Conference date: 02-10-2007 Through 05-10-2007",

}

Gonda, V, Slabbekoorn, J & Nanver, LK 2007, Silicon laser annealing by a two-pulse laser system with variable pulse offsets. in 15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007., 4383851, pp. 257-261, 15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007, Catania, Italy, 2/10/07. https://doi.org/10.1109/RTP.2007.4383851

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AU - Gonda, V.

AU - Slabbekoorn, J.

AU - Nanver, L. K.

N1 - Conference code: 15

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Double-pulsed high-power excimer laser annealing is investigated for use as a means of implanted dopant activation. The laser setup incorporates two lasers that allow double pulse laser annealing with pulse offsets much smaller than the repetition of the individual XeCl excimer lasers. In this configuration, the pulse offset can be fine tuned. Sheet resistances are measured and thermal simulations are conducted to study temperature profiles. Results show, that the total laser energy needed for a complete activation increases with the pulse separation. The increase can be compensated by substrate heating. In this way the thermal budget can be tuned with more freedom.

AB - Double-pulsed high-power excimer laser annealing is investigated for use as a means of implanted dopant activation. The laser setup incorporates two lasers that allow double pulse laser annealing with pulse offsets much smaller than the repetition of the individual XeCl excimer lasers. In this configuration, the pulse offset can be fine tuned. Sheet resistances are measured and thermal simulations are conducted to study temperature profiles. Results show, that the total laser energy needed for a complete activation increases with the pulse separation. The increase can be compensated by substrate heating. In this way the thermal budget can be tuned with more freedom.

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U2 - 10.1109/RTP.2007.4383851

DO - 10.1109/RTP.2007.4383851

M3 - Conference contribution

AN - SCOPUS:47949090616

SN - 1424412277

SN - 9781424412273

SP - 257

EP - 261

BT - 15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007

T2 - 15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007

Y2 - 2 October 2007 through 5 October 2007

ER -

Silicon laser annealing by a two-pulse laser system with variable pulse offsets

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