Silicon LEDs in FinFET technology

G. Piccolo; P.I. Kuindersma; L-A. Ragnarsson; Raymond Josephus Engelbart Hueting; N. Collaert; Jurriaan Schmitz

doi:10.1109/ESSDERC.2014.6948813

Silicon LEDs in FinFET technology

G. Piccolo, P.I. Kuindersma, L-A. Ragnarsson, Raymond Josephus Engelbart Hueting, N. Collaert, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

14 Citations (Scopus)

Abstract

We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.

Original language	Undefined
Title of host publication	Proceeding ofthe 44th European Solid State Device Research Conference (ESSDERC)
Place of Publication	USA
Publisher	IEEE Circuits & Systems Society
Pages	274-277
Number of pages	4
ISBN (Print)	978-1-4799-4378-4
DOIs	https://doi.org/10.1109/ESSDERC.2014.6948813
Publication status	Published - 26 Sep 2014
Event	44th European Solid State Device Research Conference, ESSDERC 2014 - Venice, Italy Duration: 22 Sep 2014 → 26 Sep 2014 Conference number: 44

Publication series

Name
Publisher	IEEE Circuits & Systems Society
ISSN (Print)	1930-8876

Conference

Conference	44th European Solid State Device Research Conference, ESSDERC 2014
Abbreviated title	ESSDERC 2014
Country/Territory	Italy
City	Venice
Period	22/09/14 → 26/09/14

Keywords

EWI-25351
METIS-309683
p-i-n diodes
Near-infrared light emission
Nanometric devices
Integrated Optics
Light emitting diodes
Silicon
Silicon Photonics
Silicon on insulator technology
LED
Elemental semiconductors
IR-92859
Carrier injectors
FinFETs
Infrared light sources
Electroluminescence

Access to Document

10.1109/ESSDERC.2014.6948813

http://eprints.eemcs.utwente.nl/secure2/25351/01/D070-C5L-E1-9124_Essderc_Giulia.pdf

Cite this

@inproceedings{d6a099662efa4bf1b45fbd1e22c70163,

title = "Silicon LEDs in FinFET technology",

abstract = "We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.",

keywords = "EWI-25351, METIS-309683, p-i-n diodes, Near-infrared light emission, Nanometric devices, Integrated Optics, Light emitting diodes, Silicon, Silicon Photonics, Silicon on insulator technology, LED, Elemental semiconductors, IR-92859, Carrier injectors, FinFETs, Infrared light sources, Electroluminescence",

author = "G. Piccolo and P.I. Kuindersma and L-A. Ragnarsson and Hueting, {Raymond Josephus Engelbart} and N. Collaert and Jurriaan Schmitz",

note = "10.1109/ESSDERC.2014.6948813 ; null ; Conference date: 22-09-2014 Through 26-09-2014",

year = "2014",

month = sep,

day = "26",

doi = "10.1109/ESSDERC.2014.6948813",

language = "Undefined",

isbn = "978-1-4799-4378-4",

publisher = "IEEE Circuits & Systems Society",

pages = "274--277",

booktitle = "Proceeding ofthe 44th European Solid State Device Research Conference (ESSDERC)",

}

Piccolo, G, Kuindersma, PI, Ragnarsson, L-A, Hueting, RJE, Collaert, N & Schmitz, J 2014, Silicon LEDs in FinFET technology. in Proceeding ofthe 44th European Solid State Device Research Conference (ESSDERC). IEEE Circuits & Systems Society, USA, pp. 274-277, 44th European Solid State Device Research Conference, ESSDERC 2014, Venice, Italy, 22/09/14. https://doi.org/10.1109/ESSDERC.2014.6948813

TY - GEN

T1 - Silicon LEDs in FinFET technology

AU - Piccolo, G.

AU - Kuindersma, P.I.

AU - Ragnarsson, L-A.

AU - Hueting, Raymond Josephus Engelbart

AU - Collaert, N.

AU - Schmitz, Jurriaan

N1 - Conference code: 44

PY - 2014/9/26

Y1 - 2014/9/26

N2 - We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.

AB - We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.

KW - EWI-25351

KW - METIS-309683

KW - p-i-n diodes

KW - Near-infrared light emission

KW - Nanometric devices

KW - Integrated Optics

KW - Light emitting diodes

KW - Silicon

KW - Silicon Photonics

KW - Silicon on insulator technology

KW - LED

KW - Elemental semiconductors

KW - IR-92859

KW - Carrier injectors

KW - FinFETs

KW - Infrared light sources

KW - Electroluminescence

U2 - 10.1109/ESSDERC.2014.6948813

DO - 10.1109/ESSDERC.2014.6948813

M3 - Conference contribution

SN - 978-1-4799-4378-4

SP - 274

EP - 277

BT - Proceeding ofthe 44th European Solid State Device Research Conference (ESSDERC)

PB - IEEE Circuits & Systems Society

CY - USA

Y2 - 22 September 2014 through 26 September 2014

ER -