Silicon LEDs in FinFET technology

G. Piccolo, P.I. Kuindersma, L-A. Ragnarsson, Raymond Josephus Engelbart Hueting, N. Collaert, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    14 Citations (Scopus)


    We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.
    Original languageUndefined
    Title of host publicationProceeding ofthe 44th European Solid State Device Research Conference (ESSDERC)
    Place of PublicationUSA
    PublisherIEEE Circuits & Systems Society
    Number of pages4
    ISBN (Print)978-1-4799-4378-4
    Publication statusPublished - 26 Sep 2014
    Event44th European Solid State Device Research Conference, ESSDERC 2014 - Venice, Italy
    Duration: 22 Sep 201426 Sep 2014
    Conference number: 44

    Publication series

    PublisherIEEE Circuits & Systems Society
    ISSN (Print)1930-8876


    Conference44th European Solid State Device Research Conference, ESSDERC 2014
    Abbreviated titleESSDERC 2014


    • EWI-25351
    • METIS-309683
    • p-i-n diodes
    • Near-infrared light emission
    • Nanometric devices
    • Integrated Optics
    • Light emitting diodes
    • Silicon
    • Silicon Photonics
    • Silicon on insulator technology
    • LED
    • Elemental semiconductors
    • IR-92859
    • Carrier injectors
    • FinFETs
    • Infrared light sources
    • Electroluminescence

    Cite this