Abstract
We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.
Original language | Undefined |
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Title of host publication | Proceeding ofthe 44th European Solid State Device Research Conference (ESSDERC) |
Place of Publication | USA |
Publisher | IEEE Circuits & Systems Society |
Pages | 274-277 |
Number of pages | 4 |
ISBN (Print) | 978-1-4799-4378-4 |
DOIs | |
Publication status | Published - 26 Sep 2014 |
Event | 44th European Solid State Device Research Conference, ESSDERC 2014 - Venice, Italy Duration: 22 Sep 2014 → 26 Sep 2014 Conference number: 44 |
Publication series
Name | |
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Publisher | IEEE Circuits & Systems Society |
ISSN (Print) | 1930-8876 |
Conference
Conference | 44th European Solid State Device Research Conference, ESSDERC 2014 |
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Abbreviated title | ESSDERC 2014 |
Country/Territory | Italy |
City | Venice |
Period | 22/09/14 → 26/09/14 |
Keywords
- EWI-25351
- METIS-309683
- p-i-n diodes
- Near-infrared light emission
- Nanometric devices
- Integrated Optics
- Light emitting diodes
- Silicon
- Silicon Photonics
- Silicon on insulator technology
- LED
- Elemental semiconductors
- IR-92859
- Carrier injectors
- FinFETs
- Infrared light sources
- Electroluminescence