Silicon LEDs with antifuse injection

G. Piccolo, T. Hoang, J. Holleman, Alexeij Y. Kovalgin, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)

    Abstract

    A novel carrier-confinement structure is proposed and realized to generate light in a silicon diode. A significant enhancement of the external power efficiency is observed compared to reference silicon diodes on SOI.
    Original languageUndefined
    Title of host publication5th IEEE International Conference on Group IV Photonics, 2008
    Place of PublicationPiscataway
    PublisherIEEE Computer Society Press
    Pages49-51
    Number of pages3
    ISBN (Print)978-1-4244-1768-1
    DOIs
    Publication statusPublished - 17 Sep 2008
    Event5th IEEE International Conference on Group IV Photonics, GFP 2008 - Sorrento, Italy
    Duration: 17 Sep 200819 Sep 2008
    Conference number: 5

    Publication series

    Name
    PublisherIEEE Computer Society Press

    Conference

    Conference5th IEEE International Conference on Group IV Photonics, GFP 2008
    Abbreviated titleGFP 2008
    CountryItaly
    CitySorrento
    Period17/09/0819/09/08

    Keywords

    • SC-SBLE: Silicon-based Light Emitters
    • METIS-263701
    • EWI-14587
    • IR-62601

    Cite this

    Piccolo, G., Hoang, T., Holleman, J., Kovalgin, A. Y., & Schmitz, J. (2008). Silicon LEDs with antifuse injection. In 5th IEEE International Conference on Group IV Photonics, 2008 (pp. 49-51). [10.1109/GROUP4.2008.4638093] Piscataway: IEEE Computer Society Press. https://doi.org/10.1109/GROUP4.2008.4638093