Silicon light-emitting diode antifuse: properties and devices

P. Le Minh, J. Holleman

    Research output: Contribution to journalArticleAcademicpeer-review

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    Abstract

    This paper reviews our research on the silicon light-emitting diode antifuse, a tiny source featuring a full white-light spectrum. Optical and electrical properties of the device are discussed together with the modelling of the spectral emission, explaining the emitting mechanism of the device. An estimation of the antifuse’s internal power conversion efficiency reveals a reasonable value of at least 10−5. Photochemical effect on two types of photoresists were carried out showing a clear impact of the emitted photons in the near ultraviolet range. The two integrated device prototypes, namely the opto-isolator which communicates optically and the microscale opto-fluidic device which senses the difference in the refractive indices of liquids, indicate that the light-emitting diode antifuse has the potential for sensor and actuator applications. (Some figures in this article are in colour only in the electronic version)
    Original languageUndefined
    Article number10.1088/0022-3727/39/17/006
    Pages (from-to)3749-3754
    Number of pages6
    JournalJournal of physics D: applied physics
    Volume39
    Issue number2
    DOIs
    Publication statusPublished - 21 Aug 2006

    Keywords

    • EWI-6908
    • IR-63430
    • METIS-238167
    • SC-SBLE: Silicon-based Light Emitters

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