Silicon micromachining with nanometer-thin boron masking and membrane material

Xingyu Liu*, Joe Italiano, Robin Scott, Lis K. Nanver

*Corresponding author for this work

    Research output: Contribution to journalArticleAcademicpeer-review

    5 Citations (Scopus)
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    Chemical-vapor-deposition (CVD) conditions were investigated for enabling the growth of pure boron (PureB) on Si with low stress and at as low as possible temperature. The application of the B as masking material for Si wet etching by tetramethyl ammonium hydroxide (TMAH) and as membrane material was demonstrated for B deposition temperatures down to 300 °C. Layer thickness in the range 4 nm to 40 nm was applied. In a Si epitaxy reactor system a close to zero-stress condition was found at ∼600 °C, and in an atomic-layer deposition system operated in CVD mode, loosely-bonded 300 °C layers without measurable stress were realized. The compactness of the layers was evaluated by monitoring the etch rate in standard aluminum wet etchant and by observing electron transmissivity, confirming a clear relationship between deposition conditions, compactness and stress.

    Original languageEnglish
    Article number116438
    JournalMaterials Research Express
    Issue number11
    Publication statusPublished - 18 Oct 2019


    • Boron membrane
    • Chemical vapor deposition (CVD)
    • Silicon micromachining
    • Stress
    • Tetramethyl ammonium hydroxide (TMAH)
    • n/a OA procedure


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