Silicon micromachining with nanometer-thin boron masking and membrane material

Xingyu Liu, Joe Italiano, Robin Scott, Lis K. Nanver

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

Chemical-vapor-deposition (CVD) conditions were investigated for enabling the growth of pure boron (PureB) on Si with low stress and at as low as possible temperature. The application of the B as masking material for Si wet etching by tetramethyl ammonium hydroxide (TMAH) and as membrane material was demonstrated for B deposition temperatures down to 300 °C. Layer thickness in the range 4 nm to 40 nm was applied. In a Si epitaxy reactor system a close to zero-stress condition was found at ∼600 °C, and in an atomic-layer deposition system operated in CVD mode, loosely-bonded 300 °C layers without measurable stress were realized. The compactness of the layers was evaluated by monitoring the etch rate in standard aluminum wet etchant and by observing electron transmissivity, confirming a clear relationship between deposition conditions, compactness and stress.

Original languageEnglish
Article number116438
JournalMaterials Research Express
Volume6
Issue number11
DOIs
Publication statusE-pub ahead of print/First online - 18 Oct 2019

Fingerprint

Boron
Micromachining
Silicon
Membranes
Chemical vapor deposition
Ammonium Hydroxide
Ammonium hydroxide
Atomic layer deposition
Wet etching
Aluminum
Epitaxial growth
Temperature
Electrons
Monitoring

Keywords

  • boron membrane
  • chemical vapor deposition
  • silicon micromachining
  • stress
  • tetramethyl ammonium hydroxide

Cite this

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title = "Silicon micromachining with nanometer-thin boron masking and membrane material",
abstract = "Chemical-vapor-deposition (CVD) conditions were investigated for enabling the growth of pure boron (PureB) on Si with low stress and at as low as possible temperature. The application of the B as masking material for Si wet etching by tetramethyl ammonium hydroxide (TMAH) and as membrane material was demonstrated for B deposition temperatures down to 300 °C. Layer thickness in the range 4 nm to 40 nm was applied. In a Si epitaxy reactor system a close to zero-stress condition was found at ∼600 °C, and in an atomic-layer deposition system operated in CVD mode, loosely-bonded 300 °C layers without measurable stress were realized. The compactness of the layers was evaluated by monitoring the etch rate in standard aluminum wet etchant and by observing electron transmissivity, confirming a clear relationship between deposition conditions, compactness and stress.",
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author = "Xingyu Liu and Joe Italiano and Robin Scott and Nanver, {Lis K.}",
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Silicon micromachining with nanometer-thin boron masking and membrane material. / Liu, Xingyu; Italiano, Joe; Scott, Robin; Nanver, Lis K.

In: Materials Research Express, Vol. 6, No. 11, 116438, 18.10.2019.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Silicon micromachining with nanometer-thin boron masking and membrane material

AU - Liu, Xingyu

AU - Italiano, Joe

AU - Scott, Robin

AU - Nanver, Lis K.

PY - 2019/10/18

Y1 - 2019/10/18

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AB - Chemical-vapor-deposition (CVD) conditions were investigated for enabling the growth of pure boron (PureB) on Si with low stress and at as low as possible temperature. The application of the B as masking material for Si wet etching by tetramethyl ammonium hydroxide (TMAH) and as membrane material was demonstrated for B deposition temperatures down to 300 °C. Layer thickness in the range 4 nm to 40 nm was applied. In a Si epitaxy reactor system a close to zero-stress condition was found at ∼600 °C, and in an atomic-layer deposition system operated in CVD mode, loosely-bonded 300 °C layers without measurable stress were realized. The compactness of the layers was evaluated by monitoring the etch rate in standard aluminum wet etchant and by observing electron transmissivity, confirming a clear relationship between deposition conditions, compactness and stress.

KW - boron membrane

KW - chemical vapor deposition

KW - silicon micromachining

KW - stress

KW - tetramethyl ammonium hydroxide

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