@inproceedings{858462a91a0049edb6784986a2515544,
title = "Silicon Nanowire Fabrication Using Edge and Corner Lithography",
abstract = "This paper presents a wafer scale fabrication method of single-crystalline silicon nanowires (SiNWs) bound by <111> planes using a combination of edge and corner lithography. These are methods of unconventional nanolithography for wafer scale nano-patterning which determine the size of nano-features to the formed. The pattern formed by conventional microlithography determines the location. The presented method is based on the low etch rate of <111>-planes. Initially, using edge lithography, nanoridges with ∼71° angle with the wafer surface and bound by <111>-planes are fabricated. Thereafter, corner lithography is used. The fabricated SiNWs can be isolated from the substrate by oxidation of the thin silicon base.",
keywords = "IR-75032, EWI-18565, METIS-275667",
author = "H. Yagubizade and Berenschot, {Johan W.} and Jansen, {Henricus V.} and Elwenspoek, {Michael Curt} and Tas, {Niels Roelof}",
note = "10.1109/NMDC.2010.5652181 ; IEEE Nanotechnology Materials and Devices Conference, NMDC 2010, Monterey, CA, USA ; Conference date: 12-10-2010",
year = "2010",
month = oct,
day = "12",
doi = "10.1109/NMDC.2010.5652181",
language = "Undefined",
isbn = "978-1-4244-8896-4",
publisher = "IEEE",
pages = "128--131",
booktitle = "IEEE Nanotechnology Materials and Devices Conference, NMDC 2010",
address = "United States",
}