Silicon Nanowire Fabrication Using Edge and Corner Lithography

H. Yagubizade, Johan W. Berenschot, Henricus V. Jansen, Michael Curt Elwenspoek, Niels Roelof Tas

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    3 Citations (Scopus)
    67 Downloads (Pure)

    Abstract

    This paper presents a wafer scale fabrication method of single-crystalline silicon nanowires (SiNWs) bound by <111> planes using a combination of edge and corner lithography. These are methods of unconventional nanolithography for wafer scale nano-patterning which determine the size of nano-features to the formed. The pattern formed by conventional microlithography determines the location. The presented method is based on the low etch rate of <111>-planes. Initially, using edge lithography, nanoridges with ∼71° angle with the wafer surface and bound by <111>-planes are fabricated. Thereafter, corner lithography is used. The fabricated SiNWs can be isolated from the substrate by oxidation of the thin silicon base.
    Original languageUndefined
    Title of host publicationIEEE Nanotechnology Materials and Devices Conference, NMDC 2010
    Place of PublicationMonterey
    PublisherIEEE
    Pages128-131
    Number of pages4
    ISBN (Print)978-1-4244-8896-4
    DOIs
    Publication statusPublished - 12 Oct 2010

    Publication series

    Name
    PublisherIEEE

    Keywords

    • IR-75032
    • EWI-18565
    • METIS-275667

    Cite this

    Yagubizade, H., Berenschot, J. W., Jansen, H. V., Elwenspoek, M. C., & Tas, N. R. (2010). Silicon Nanowire Fabrication Using Edge and Corner Lithography. In IEEE Nanotechnology Materials and Devices Conference, NMDC 2010 (pp. 128-131). Monterey: IEEE. https://doi.org/10.1109/NMDC.2010.5652181