This paper presents a wafer scale fabrication method of single-crystalline silicon nanowires (SiNWs) bound by <111> planes using a combination of edge and corner lithography. These are methods of unconventional nanolithography for wafer scale nano-patterning which determine the size of nano-features to the formed. The pattern formed by conventional microlithography determines the location. The presented method is based on the low etch rate of <111>-planes. Initially, using edge lithography, nanoridges with ∼71° angle with the wafer surface and bound by <111>-planes are fabricated. Thereafter, corner lithography is used. The fabricated SiNWs can be isolated from the substrate by oxidation of the thin silicon base.
|Title of host publication||IEEE Nanotechnology Materials and Devices Conference, NMDC 2010|
|Place of Publication||Monterey|
|Number of pages||4|
|Publication status||Published - 12 Oct 2010|
Yagubizade, H., Berenschot, J. W., Jansen, H. V., Elwenspoek, M. C., & Tas, N. R. (2010). Silicon Nanowire Fabrication Using Edge and Corner Lithography. In IEEE Nanotechnology Materials and Devices Conference, NMDC 2010 (pp. 128-131). Monterey: IEEE. https://doi.org/10.1109/NMDC.2010.5652181