Silicon nitride as dielectric in the low temperature SiGe HBT processing

Q.W. Ren, L.K. Nanver, C.R. de Boer, H.W. Van Zeijl

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Abstract

Low-stress silicon-rich SiNx deposited at or below 700°C by either LPCVD or PECVD has been studied for potential use in the surface processing of a 45 GHz SiGe HBT IC-process. The films underwent a thermal anneal at 700°C and in all cases a thin oxide buffer layer was necessary for achieving suitable film quality.

Original languageEnglish
Pages (from-to)179-182
Number of pages4
JournalMicroelectronic engineering
Volume36
Issue number1-4
DOIs
Publication statusPublished - Jun 1997
Externally publishedYes

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