Silicon nitride as dielectric in the low temperature SiGe HBT processing

Q.W. Ren, L.K. Nanver, C.R. de Boer, H.W. Van Zeijl

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Abstract

Low-stress silicon-rich SiNx deposited at or below 700°C by either LPCVD or PECVD has been studied for potential use in the surface processing of a 45 GHz SiGe HBT IC-process. The films underwent a thermal anneal at 700°C and in all cases a thin oxide buffer layer was necessary for achieving suitable film quality.

Original languageEnglish
Pages (from-to)179-182
Number of pages4
JournalMicroelectronic engineering
Volume36
Issue number1-4
DOIs
Publication statusPublished - Jun 1997
Externally publishedYes

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Heterojunction bipolar transistors
Silicon nitride
silicon nitrides
Silicon
Buffer layers
Plasma enhanced chemical vapor deposition
Processing
Oxides
buffers
Temperature
oxides
silicon
silicon nitride
Hot Temperature

Cite this

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title = "Silicon nitride as dielectric in the low temperature SiGe HBT processing",
abstract = "Low-stress silicon-rich SiNx deposited at or below 700°C by either LPCVD or PECVD has been studied for potential use in the surface processing of a 45 GHz SiGe HBT IC-process. The films underwent a thermal anneal at 700°C and in all cases a thin oxide buffer layer was necessary for achieving suitable film quality.",
author = "Q.W. Ren and L.K. Nanver and {de Boer}, C.R. and {Van Zeijl}, H.W.",
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doi = "10.1016/S0167-9317(97)00043-9",
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journal = "Microelectronic engineering",
issn = "0167-9317",
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Silicon nitride as dielectric in the low temperature SiGe HBT processing. / Ren, Q.W.; Nanver, L.K.; de Boer, C.R.; Van Zeijl, H.W.

In: Microelectronic engineering, Vol. 36, No. 1-4, 06.1997, p. 179-182.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Silicon nitride as dielectric in the low temperature SiGe HBT processing

AU - Ren, Q.W.

AU - Nanver, L.K.

AU - de Boer, C.R.

AU - Van Zeijl, H.W.

PY - 1997/6

Y1 - 1997/6

N2 - Low-stress silicon-rich SiNx deposited at or below 700°C by either LPCVD or PECVD has been studied for potential use in the surface processing of a 45 GHz SiGe HBT IC-process. The films underwent a thermal anneal at 700°C and in all cases a thin oxide buffer layer was necessary for achieving suitable film quality.

AB - Low-stress silicon-rich SiNx deposited at or below 700°C by either LPCVD or PECVD has been studied for potential use in the surface processing of a 45 GHz SiGe HBT IC-process. The films underwent a thermal anneal at 700°C and in all cases a thin oxide buffer layer was necessary for achieving suitable film quality.

U2 - 10.1016/S0167-9317(97)00043-9

DO - 10.1016/S0167-9317(97)00043-9

M3 - Article

VL - 36

SP - 179

EP - 182

JO - Microelectronic engineering

JF - Microelectronic engineering

SN - 0167-9317

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ER -