Silicon nitride as dielectric in the low temperature SiGe HBT processing

Q.W. Ren; L.K. Nanver; C.R. de Boer; H.W. van Zeijl

doi:10.1016/S0167-9317(97)00043-9

Silicon nitride as dielectric in the low temperature SiGe HBT processing

Q.W. Ren, L.K. Nanver, C.R. de Boer, H.W. van Zeijl

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Abstract

Low-stress silicon-rich SiN_x deposited at or below 700°C by either LPCVD or PECVD has been studied for potential use in the surface processing of a 45 GHz SiGe HBT IC-process. The films underwent a thermal anneal at 700°C and in all cases a thin oxide buffer layer was necessary for achieving suitable film quality.

Original language	English
Pages (from-to)	179-182
Number of pages	4
Journal	Microelectronic engineering
Volume	36
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(97)00043-9
Publication status	Published - Jun 1997
Externally published	Yes

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n/a OA procedure

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10.1016/S0167-9317(97)00043-9

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title = "Silicon nitride as dielectric in the low temperature SiGe HBT processing",

abstract = "Low-stress silicon-rich SiNx deposited at or below 700°C by either LPCVD or PECVD has been studied for potential use in the surface processing of a 45 GHz SiGe HBT IC-process. The films underwent a thermal anneal at 700°C and in all cases a thin oxide buffer layer was necessary for achieving suitable film quality.",

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author = "Q.W. Ren and L.K. Nanver and \{de Boer\}, C.R. and \{van Zeijl\}, H.W.",

year = "1997",

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T1 - Silicon nitride as dielectric in the low temperature SiGe HBT processing

AU - Ren, Q.W.

AU - Nanver, L.K.

AU - de Boer, C.R.

AU - van Zeijl, H.W.

PY - 1997/6

Y1 - 1997/6

N2 - Low-stress silicon-rich SiNx deposited at or below 700°C by either LPCVD or PECVD has been studied for potential use in the surface processing of a 45 GHz SiGe HBT IC-process. The films underwent a thermal anneal at 700°C and in all cases a thin oxide buffer layer was necessary for achieving suitable film quality.

AB - Low-stress silicon-rich SiNx deposited at or below 700°C by either LPCVD or PECVD has been studied for potential use in the surface processing of a 45 GHz SiGe HBT IC-process. The films underwent a thermal anneal at 700°C and in all cases a thin oxide buffer layer was necessary for achieving suitable film quality.

KW - n/a OA procedure

U2 - 10.1016/S0167-9317(97)00043-9

DO - 10.1016/S0167-9317(97)00043-9

M3 - Article

AN - SCOPUS:0031150247

SN - 0167-9317

VL - 36

SP - 179

EP - 182

JO - Microelectronic engineering

JF - Microelectronic engineering

IS - 1-4

ER -

Silicon nitride as dielectric in the low temperature SiGe HBT processing

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