Silicon Nitride layers obstained by ECR PECVD

I.G. Isai, J. Holleman, P.H. Woerlee, Hans Wallinga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	Undefined
Title of host publication	Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	39-41
Number of pages	3
ISBN (Print)	90-73461-33-2
Publication status	Published - 27 Nov 2002

Keywords

@inproceedings{1559e0216cea4930b2267abb0c0fbded,

title = "Silicon Nitride layers obstained by ECR PECVD",

keywords = "METIS-207326",

author = "I.G. Isai and J. Holleman and P.H. Woerlee and Hans Wallinga",

year = "2002",

month = nov,

day = "27",

language = "Undefined",

isbn = "90-73461-33-2",

pages = "39--41",

booktitle = "Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002",

publisher = "STW",

}

TY - GEN

T1 - Silicon Nitride layers obstained by ECR PECVD

AU - Isai, I.G.

AU - Holleman, J.

AU - Woerlee, P.H.

AU - Wallinga, Hans

PY - 2002/11/27

Y1 - 2002/11/27

KW - METIS-207326

M3 - Conference contribution

SN - 90-73461-33-2

SP - 39

EP - 41

BT - Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002

PB - STW

CY - Utrecht, The Netherlands

ER -