Silicon Nitride layers obstained by ECR PECVD

I.G. Isai, J. Holleman, P.H. Woerlee, Hans Wallinga

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages39-41
    Number of pages3
    ISBN (Print)90-73461-33-2
    Publication statusPublished - 27 Nov 2002

    Keywords

    • METIS-207326

    Cite this

    Isai, I. G., Holleman, J., Woerlee, P. H., & Wallinga, H. (2002). Silicon Nitride layers obstained by ECR PECVD. In Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002 (pp. 39-41). Utrecht, The Netherlands: STW.