Silicon nitride layers obtained by ECR PECVD

I.G. Isai; J. Holleman; P.H. Woerlee; Hans Wallinga

Silicon nitride layers obtained by ECR PECVD

I.G. Isai, J. Holleman, P.H. Woerlee, Hans Wallinga

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Abstract

It has been found that good quality silicon nitride films can be deposited at room temperature, with an alternate electron cyclotron resonance (ECR) plasma source, called multipolar ECR. The effects of several deposition conditions on physical and electrical properties were studied in order to optimise the deposition process. The layers were characterised by a refractive index of 1.97, dielectric constant of 7.1, Si/N ratio values of around 0.78 and very low hydrogen content (under 1%). The lowest oxygen contamination (2%) was obtained for the highest nitrogen flow. A decrease in refractive index was observed at high pressure, probably because of insufficient energy to dissociate the nitrogen molecules. The density of interface charge was estimated to be in the range of 3-11•1011 cm-2 and the breakdown field was calculated to be around 12 MV/cm.

Original language	Undefined
Pages	39-41
Number of pages	3
Publication status	Published - 27 Nov 2002
Event	5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 - Veldhoven, Netherlands Duration: 27 Nov 2002 → 28 Nov 2002 Conference number: 5

Workshop

Workshop	5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	27/11/02 → 28/11/02

Keywords

Poole-Frenkel
room temperature
PECVD
IR-67760
Silicon nitride
EWI-15588

Access to Document

http://eprints.eemcs.utwente.nl/secure2/15588/01/isai.pdf

Cite this

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title = "Silicon nitride layers obtained by ECR PECVD",

abstract = "It has been found that good quality silicon nitride films can be deposited at room temperature, with an alternate electron cyclotron resonance (ECR) plasma source, called multipolar ECR. The effects of several deposition conditions on physical and electrical properties were studied in order to optimise the deposition process. The layers were characterised by a refractive index of 1.97, dielectric constant of 7.1, Si/N ratio values of around 0.78 and very low hydrogen content (under 1%). The lowest oxygen contamination (2%) was obtained for the highest nitrogen flow. A decrease in refractive index was observed at high pressure, probably because of insufficient energy to dissociate the nitrogen molecules. The density of interface charge was estimated to be in the range of 3-11•1011 cm-2 and the breakdown field was calculated to be around 12 MV/cm.",

keywords = "Poole-Frenkel, room temperature, PECVD, IR-67760, Silicon nitride, EWI-15588",

author = "I.G. Isai and J. Holleman and P.H. Woerlee and Hans Wallinga",

year = "2002",

month = nov,

day = "27",

language = "Undefined",

pages = "39--41",

note = "5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 ; Conference date: 27-11-2002 Through 28-11-2002",

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TY - CONF

T1 - Silicon nitride layers obtained by ECR PECVD

AU - Isai, I.G.

AU - Holleman, J.

AU - Woerlee, P.H.

AU - Wallinga, Hans

N1 - Conference code: 5

PY - 2002/11/27

Y1 - 2002/11/27

N2 - It has been found that good quality silicon nitride films can be deposited at room temperature, with an alternate electron cyclotron resonance (ECR) plasma source, called multipolar ECR. The effects of several deposition conditions on physical and electrical properties were studied in order to optimise the deposition process. The layers were characterised by a refractive index of 1.97, dielectric constant of 7.1, Si/N ratio values of around 0.78 and very low hydrogen content (under 1%). The lowest oxygen contamination (2%) was obtained for the highest nitrogen flow. A decrease in refractive index was observed at high pressure, probably because of insufficient energy to dissociate the nitrogen molecules. The density of interface charge was estimated to be in the range of 3-11•1011 cm-2 and the breakdown field was calculated to be around 12 MV/cm.

AB - It has been found that good quality silicon nitride films can be deposited at room temperature, with an alternate electron cyclotron resonance (ECR) plasma source, called multipolar ECR. The effects of several deposition conditions on physical and electrical properties were studied in order to optimise the deposition process. The layers were characterised by a refractive index of 1.97, dielectric constant of 7.1, Si/N ratio values of around 0.78 and very low hydrogen content (under 1%). The lowest oxygen contamination (2%) was obtained for the highest nitrogen flow. A decrease in refractive index was observed at high pressure, probably because of insufficient energy to dissociate the nitrogen molecules. The density of interface charge was estimated to be in the range of 3-11•1011 cm-2 and the breakdown field was calculated to be around 12 MV/cm.

KW - Poole-Frenkel

KW - room temperature

KW - PECVD

KW - IR-67760

KW - Silicon nitride

KW - EWI-15588

M3 - Paper

SP - 39

EP - 41

T2 - 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002

Y2 - 27 November 2002 through 28 November 2002

ER -