Silicon-on-glass technology for RF and microwave device fabrication

L.K. Nanver*, H. Schellevis, T. L.M. Scholtes, L. La Spina, G. Lorito, F. Sarubbi, V. Gonda, M. Popadić, K. Buisman, L.C.N. de Vreede, C. Huang, S. Milosavljevic, E.J.G. Goudena

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

This paper reviews the applications and potentials of back-wafer contacted silicon-on-glass (SOG) substrate-transfer technology (STT) particularly for RF and microwave silicon-device-design enhancement. This type of SOG process gives direct access to the part of the device that is usually connected via the bulk Si, by allowing advanced patterning and contacting of the backside of the wafer (back-wafer) with respect to the front of the wafer (front-wafer). In this manner the resistive and capacitive parasitics of the device itself, which in silicon often inhibit high-frequency (HF) performance, can be reduced to a minimum. At the same time new device concepts are made possible. Examples of fabricated devices (varactor diodes, vertical double-diffused MOSFETs (VDMOSFETs) and complementary bipolar transistors) are given and described in relationship to issues such as the very limited thermal budget permitted in the back-wafer processing and the inherently high thermal resistance of the SOG devices.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages162-165
Number of pages4
DOIs
Publication statusPublished - 2 Aug 2007
Externally publishedYes
Event8th International Conference on Solid-State and Integrated Circuit Technology 2006 - Shanghai, China
Duration: 23 Oct 200626 Oct 2006
Conference number: 8

Conference

Conference8th International Conference on Solid-State and Integrated Circuit Technology 2006
Abbreviated titleICSICT-2006
CountryChina
CityShanghai
Period23/10/0626/10/06

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