Abstract
The use of aluminum as an electrode in metal-insulator-semiconductor devices containing lanthanum oxide is impaired by unacceptable leakage current levels. Time of flight secondary ion mass spectroscopy depth profiling shows a significant amount of silicon out-diffusion from the substrate and aluminum in-diffusion towards the oxide. By using titanium nitride as the electrode, the silicon out-diffusion is suppressed, which improves the device performance. This indicates that, despite the larger coordination number of the lanthanum ions in the oxide, aluminum acts as a sink for silicon, thus driving the out-diffusion of silicon.
Original language | Undefined |
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Pages (from-to) | 192912 |
Number of pages | 3 |
Journal | Applied physics letters |
Volume | 93 |
Issue number | 19 |
DOIs | |
Publication status | Published - 12 Nov 2008 |
Keywords
- IR-76691
- EWI-20005