Silicon out-diffusion and aluminum in-diffusion in devices with atomic-layer deposited La2O3 thin films

K.B. Jinesh, Y. Lamy, Robertus A.M. Wolters, J.H. Klootwijk, E. Tois, F. Roozeboom, W.F.A. Besling

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    The use of aluminum as an electrode in metal-insulator-semiconductor devices containing lanthanum oxide is impaired by unacceptable leakage current levels. Time of flight secondary ion mass spectroscopy depth profiling shows a significant amount of silicon out-diffusion from the substrate and aluminum in-diffusion towards the oxide. By using titanium nitride as the electrode, the silicon out-diffusion is suppressed, which improves the device performance. This indicates that, despite the larger coordination number of the lanthanum ions in the oxide, aluminum acts as a sink for silicon, thus driving the out-diffusion of silicon.
    Original languageUndefined
    Pages (from-to)192912
    Number of pages3
    JournalApplied physics letters
    Issue number19
    Publication statusPublished - 12 Nov 2008


    • IR-76691
    • EWI-20005

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