Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

Yiping Zhao, Johan W. Berenschot, Meint J. de Boer, Henricus V. Jansen, Niels Roelof Tas, Jurriaan Huskens, Michael Curt Elwenspoek

Research output: Contribution to conferencePaperAcademicpeer-review

48 Downloads (Pure)


The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge lithography. Additional silicon rich nitride layer was deposited over the original silicon dioxide nanoridges to improve the ridge stiffness and to achieve a positive tapered shape which is friendly to rich mitride shield was obtained by imprint in PMMA.
Original languageUndefined
Number of pages4
Publication statusPublished - 16 Sep 2007
Event18th MicroMechanics Europe Workshop, MME 2007 - Guimaraes, Portugal
Duration: 16 Sep 200718 Sep 2007
Conference number: 18


Workshop18th MicroMechanics Europe Workshop, MME 2007
Abbreviated titleMME


  • IR-76221
  • EWI-19722

Cite this