Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

Yiping Zhao; Johan W. Berenschot; Meint J. de Boer; Henricus V. Jansen; Niels Roelof Tas; Jurriaan Huskens; Michael Curt Elwenspoek

Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

Yiping Zhao
, Johan W. Berenschot
, Meint J. de Boer
, Henricus V. Jansen
, Niels Roelof Tas
, Jurriaan Huskens
, Michael Curt Elwenspoek

Research output: Contribution to conference › Paper › peer-review

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Abstract

The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge lithography. Additional silicon rich nitride layer was deposited over the original silicon dioxide nanoridges to improve the ridge stiffness and to achieve a positive tapered shape which is friendly to rich mitride shield was obtained by imprint in PMMA.

Original language	Undefined
Pages	253-256
Number of pages	4
Publication status	Published - 16 Sept 2007
Event	18th MicroMechanics Europe Workshop, MME 2007 - Guimaraes, Portugal Duration: 16 Sept 2007 → 18 Sept 2007 Conference number: 18

Workshop

Workshop	18th MicroMechanics Europe Workshop, MME 2007
Abbreviated title	MME
Country/Territory	Portugal
City	Guimaraes
Period	16/09/07 → 18/09/07

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

IR-76221
EWI-19722

Access to Document

Cite this

@conference{b586ce142c8441ad9a1247d96980627c,

title = "Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride",

abstract = "The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge lithography. Additional silicon rich nitride layer was deposited over the original silicon dioxide nanoridges to improve the ridge stiffness and to achieve a positive tapered shape which is friendly to rich mitride shield was obtained by imprint in PMMA.",

keywords = "IR-76221, EWI-19722",

author = "Yiping Zhao and Berenschot, \{Johan W.\} and \{de Boer\}, \{Meint J.\} and Jansen, \{Henricus V.\} and Tas, \{Niels Roelof\} and Jurriaan Huskens and Elwenspoek, \{Michael Curt\}",

year = "2007",

month = sep,

day = "16",

language = "Undefined",

pages = "253--256",

note = "18th MicroMechanics Europe Workshop, MME 2007 ; Conference date: 16-09-2007 Through 18-09-2007",

}

TY - CONF

T1 - Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

AU - Zhao, Yiping

AU - Berenschot, Johan W.

AU - de Boer, Meint J.

AU - Jansen, Henricus V.

AU - Tas, Niels Roelof

AU - Huskens, Jurriaan

AU - Elwenspoek, Michael Curt

N1 - Conference code: 18

PY - 2007/9/16

Y1 - 2007/9/16

N2 - The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge lithography. Additional silicon rich nitride layer was deposited over the original silicon dioxide nanoridges to improve the ridge stiffness and to achieve a positive tapered shape which is friendly to rich mitride shield was obtained by imprint in PMMA.

AB - The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge lithography. Additional silicon rich nitride layer was deposited over the original silicon dioxide nanoridges to improve the ridge stiffness and to achieve a positive tapered shape which is friendly to rich mitride shield was obtained by imprint in PMMA.

KW - IR-76221

KW - EWI-19722

M3 - Paper

SP - 253

EP - 256

T2 - 18th MicroMechanics Europe Workshop, MME 2007

Y2 - 16 September 2007 through 18 September 2007

ER -