Silicon photodiodes for high-efficiency low-energy electron detection

Agata Šakić, Lis K. Nanver, T. L.M. Scholtes, Carel Th H. Heerkens, Gerard Van Veen, Kees Kooijman, Patrick Vogelsang

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

8 Citations (Scopus)

Abstract

Solid-state electron detectors have been fabricated using a p+n silicon photodiode where the p+ region is created by a chemical-vapor deposition (CVD) surface doping from diborane B2H6. The as-obtained nm-deep p-type layer is resistant to conventional metal etchants, which allows elimination of both entrance contacts and protection layers from the photosensitive surface. This approach lowers the dead layer energy loss, while keeping near theoretical efficiency at high electron energies. The photodiodes have outstanding performance in terms of electron signal gain at low energies achieving 60% and 74% of the theoretical gain value at 500 eV and 1 keV, respectively. The ideal I-V characteristics and the small over-the-wafer spread of the dark current indicate a defect-free p+n junction, as well as a reliable and reproducible process.

Original languageEnglish
Title of host publication2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
Pages102-105
Number of pages4
DOIs
Publication statusPublished - 15 Dec 2010
Externally publishedYes
Event40th European Solid-State Device Research Conference, ESSDERC 2010 - Sevilla, Spain
Duration: 14 Sep 201016 Sep 2010
Conference number: 40

Conference

Conference40th European Solid-State Device Research Conference, ESSDERC 2010
Abbreviated titleESSDERC 2010
CountrySpain
CitySevilla
Period14/09/1016/09/10

Fingerprint

photodiodes
electron energy
silicon
electron counters
diborane
etchants
dark current
p-n junctions
entrances
high energy electrons
elimination
energy dissipation
vapor deposition
wafers
solid state
defects
metals
electrons
energy

Cite this

Šakić, A., Nanver, L. K., Scholtes, T. L. M., Heerkens, C. T. H., Van Veen, G., Kooijman, K., & Vogelsang, P. (2010). Silicon photodiodes for high-efficiency low-energy electron detection. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 (pp. 102-105). [5617724] https://doi.org/10.1109/ESSDERC.2010.5617724
Šakić, Agata ; Nanver, Lis K. ; Scholtes, T. L.M. ; Heerkens, Carel Th H. ; Van Veen, Gerard ; Kooijman, Kees ; Vogelsang, Patrick. / Silicon photodiodes for high-efficiency low-energy electron detection. 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. pp. 102-105
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title = "Silicon photodiodes for high-efficiency low-energy electron detection",
abstract = "Solid-state electron detectors have been fabricated using a p+n silicon photodiode where the p+ region is created by a chemical-vapor deposition (CVD) surface doping from diborane B2H6. The as-obtained nm-deep p-type layer is resistant to conventional metal etchants, which allows elimination of both entrance contacts and protection layers from the photosensitive surface. This approach lowers the dead layer energy loss, while keeping near theoretical efficiency at high electron energies. The photodiodes have outstanding performance in terms of electron signal gain at low energies achieving 60{\%} and 74{\%} of the theoretical gain value at 500 eV and 1 keV, respectively. The ideal I-V characteristics and the small over-the-wafer spread of the dark current indicate a defect-free p+n junction, as well as a reliable and reproducible process.",
author = "Agata Šakić and Nanver, {Lis K.} and Scholtes, {T. L.M.} and Heerkens, {Carel Th H.} and {Van Veen}, Gerard and Kees Kooijman and Patrick Vogelsang",
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Šakić, A, Nanver, LK, Scholtes, TLM, Heerkens, CTH, Van Veen, G, Kooijman, K & Vogelsang, P 2010, Silicon photodiodes for high-efficiency low-energy electron detection. in 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010., 5617724, pp. 102-105, 40th European Solid-State Device Research Conference, ESSDERC 2010, Sevilla, Spain, 14/09/10. https://doi.org/10.1109/ESSDERC.2010.5617724

Silicon photodiodes for high-efficiency low-energy electron detection. / Šakić, Agata; Nanver, Lis K.; Scholtes, T. L.M.; Heerkens, Carel Th H.; Van Veen, Gerard; Kooijman, Kees; Vogelsang, Patrick.

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 102-105 5617724.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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AU - Vogelsang, Patrick

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AB - Solid-state electron detectors have been fabricated using a p+n silicon photodiode where the p+ region is created by a chemical-vapor deposition (CVD) surface doping from diborane B2H6. The as-obtained nm-deep p-type layer is resistant to conventional metal etchants, which allows elimination of both entrance contacts and protection layers from the photosensitive surface. This approach lowers the dead layer energy loss, while keeping near theoretical efficiency at high electron energies. The photodiodes have outstanding performance in terms of electron signal gain at low energies achieving 60% and 74% of the theoretical gain value at 500 eV and 1 keV, respectively. The ideal I-V characteristics and the small over-the-wafer spread of the dark current indicate a defect-free p+n junction, as well as a reliable and reproducible process.

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Šakić A, Nanver LK, Scholtes TLM, Heerkens CTH, Van Veen G, Kooijman K et al. Silicon photodiodes for high-efficiency low-energy electron detection. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 102-105. 5617724 https://doi.org/10.1109/ESSDERC.2010.5617724