Silicon photodiodes for high-efficiency low-energy electron detection

Agata Šakić*, Lis K. Nanver, T. L.M. Scholtes, Carel Th H. Heerkens, Gerard Van Veen, Kees Kooijman, Patrick Vogelsang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

9 Citations (Scopus)


Solid-state electron detectors have been fabricated using a p+n silicon photodiode where the p+ region is created by a chemical-vapor deposition (CVD) surface doping from diborane B2H6. The as-obtained nm-deep p-type layer is resistant to conventional metal etchants, which allows elimination of both entrance contacts and protection layers from the photosensitive surface. This approach lowers the dead layer energy loss, while keeping near theoretical efficiency at high electron energies. The photodiodes have outstanding performance in terms of electron signal gain at low energies achieving 60% and 74% of the theoretical gain value at 500 eV and 1 keV, respectively. The ideal I-V characteristics and the small over-the-wafer spread of the dark current indicate a defect-free p+n junction, as well as a reliable and reproducible process.

Original languageEnglish
Title of host publication2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
Number of pages4
Publication statusPublished - 15 Dec 2010
Externally publishedYes
Event40th European Solid-State Device Research Conference, ESSDERC 2010 - Sevilla, Spain
Duration: 14 Sept 201016 Sept 2010
Conference number: 40


Conference40th European Solid-State Device Research Conference, ESSDERC 2010
Abbreviated titleESSDERC 2010


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