Simple technique for direct patterning of nanowires using a nanoslit shadow-mask

H.D. Tong; H.V. Jansen; N.R. Tas; V.J. Gadgil; E.T. Carlen; A. van den Berg

doi:10.1109/SENSOR.2007.4300103

Simple technique for direct patterning of nanowires using a nanoslit shadow-mask

H.D. Tong
, H.V. Jansen
, N.R. Tas
, V.J. Gadgil
, E.T. Carlen
, A. van den Berg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

29 Downloads (Pure)

Abstract

Nanowires of vaious lengths and widths have been fabricated using a wafer-scale shadow mask with deposition windows, or nanoslits, created with focused ion beam machining. Metallic nanowires with widths down to 50 nm and lengths up to 100 micrometers have been realized. Measurements of electrical I-V characteristics show linear behavior of nanowires with widths and thickness each around 50 nm

Original language	English
Title of host publication	TRANSDUCERS 2007
Subtitle of host publication	2007 International Solid-State Sensors, Actuators and Microsystems Conference
Editors	G. Delapierre, R. Puers
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	191-194
Number of pages	4
ISBN (Electronic)	1-4244-0842-3 (CD)
ISBN (Print)	1-4244-0842-3
DOIs	https://doi.org/10.1109/SENSOR.2007.4300103
Publication status	Published - 10 Jun 2007
Event	14th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2007 - Lyon, France Duration: 10 Jun 2007 → 14 Jun 2007 Conference number: 14

Publication series

Name	Proceedings of TRANSDUCERS 2007 - International Solid-State Sensors, Actuators and Microsystems Conference
Publisher	IEEE
Volume	2007
ISSN (Print)	2159-547X
ISSN (Electronic)	2164-1641

Conference

Conference	14th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2007
Abbreviated title	TRANSDUCERS 2007
Country/Territory	France
City	Lyon
Period	10/06/07 → 14/06/07

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

2020 OA procedure

Access to Document

10.1109/SENSOR.2007.4300103

ArticleFinal published version, 3.34 MBLicence: Taverne

Cite this

Tong, H. D., Jansen, H. V., Tas, N. R., Gadgil, V. J., Carlen, E. T., & van den Berg, A. (2007). Simple technique for direct patterning of nanowires using a nanoslit shadow-mask. In G. Delapierre, & R. Puers (Eds.), TRANSDUCERS 2007: 2007 International Solid-State Sensors, Actuators and Microsystems Conference (pp. 191-194). (Proceedings of TRANSDUCERS 2007 - International Solid-State Sensors, Actuators and Microsystems Conference; Vol. 2007). IEEE. https://doi.org/10.1109/SENSOR.2007.4300103

Tong, H.D. ; Jansen, H.V. ; Tas, N.R. et al. / Simple technique for direct patterning of nanowires using a nanoslit shadow-mask. TRANSDUCERS 2007: 2007 International Solid-State Sensors, Actuators and Microsystems Conference. editor / G. Delapierre ; R. Puers. Piscataway, NJ : IEEE, 2007. pp. 191-194 (Proceedings of TRANSDUCERS 2007 - International Solid-State Sensors, Actuators and Microsystems Conference).

@inproceedings{91be0017ac2448d1abcb53edc3f4dfb9,

title = "Simple technique for direct patterning of nanowires using a nanoslit shadow-mask",

abstract = "Nanowires of vaious lengths and widths have been fabricated using a wafer-scale shadow mask with deposition windows, or nanoslits, created with focused ion beam machining. Metallic nanowires with widths down to 50 nm and lengths up to 100 micrometers have been realized. Measurements of electrical I-V characteristics show linear behavior of nanowires with widths and thickness each around 50 nm",

keywords = "2020 OA procedure",

author = "H.D. Tong and H.V. Jansen and N.R. Tas and V.J. Gadgil and E.T. Carlen and \{van den Berg\}, A.",

year = "2007",

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doi = "10.1109/SENSOR.2007.4300103",

language = "English",

isbn = "1-4244-0842-3",

series = "Proceedings of TRANSDUCERS 2007 - International Solid-State Sensors, Actuators and Microsystems Conference",

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pages = "191--194",

editor = "G. Delapierre and R. Puers",

booktitle = "TRANSDUCERS 2007",

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note = "14th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2007, TRANSDUCERS 2007 ; Conference date: 10-06-2007 Through 14-06-2007",

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Tong, HD, Jansen, HV, Tas, NR, Gadgil, VJ, Carlen, ET & van den Berg, A 2007, Simple technique for direct patterning of nanowires using a nanoslit shadow-mask. in G Delapierre & R Puers (eds), TRANSDUCERS 2007: 2007 International Solid-State Sensors, Actuators and Microsystems Conference. Proceedings of TRANSDUCERS 2007 - International Solid-State Sensors, Actuators and Microsystems Conference, vol. 2007, IEEE, Piscataway, NJ, pp. 191-194, 14th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2007, Lyon, France, 10/06/07. https://doi.org/10.1109/SENSOR.2007.4300103

Simple technique for direct patterning of nanowires using a nanoslit shadow-mask. / Tong, H.D.; Jansen, H.V.; Tas, N.R. et al.
TRANSDUCERS 2007: 2007 International Solid-State Sensors, Actuators and Microsystems Conference. ed. / G. Delapierre; R. Puers. Piscataway, NJ: IEEE, 2007. p. 191-194 (Proceedings of TRANSDUCERS 2007 - International Solid-State Sensors, Actuators and Microsystems Conference; Vol. 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Simple technique for direct patterning of nanowires using a nanoslit shadow-mask

AU - Tong, H.D.

AU - Jansen, H.V.

AU - Tas, N.R.

AU - Gadgil, V.J.

AU - Carlen, E.T.

AU - van den Berg, A.

N1 - Conference code: 14

PY - 2007/6/10

Y1 - 2007/6/10

N2 - Nanowires of vaious lengths and widths have been fabricated using a wafer-scale shadow mask with deposition windows, or nanoslits, created with focused ion beam machining. Metallic nanowires with widths down to 50 nm and lengths up to 100 micrometers have been realized. Measurements of electrical I-V characteristics show linear behavior of nanowires with widths and thickness each around 50 nm

AB - Nanowires of vaious lengths and widths have been fabricated using a wafer-scale shadow mask with deposition windows, or nanoslits, created with focused ion beam machining. Metallic nanowires with widths down to 50 nm and lengths up to 100 micrometers have been realized. Measurements of electrical I-V characteristics show linear behavior of nanowires with widths and thickness each around 50 nm

KW - 2020 OA procedure

U2 - 10.1109/SENSOR.2007.4300103

DO - 10.1109/SENSOR.2007.4300103

M3 - Conference contribution

SN - 1-4244-0842-3

T3 - Proceedings of TRANSDUCERS 2007 - International Solid-State Sensors, Actuators and Microsystems Conference

SP - 191

EP - 194

BT - TRANSDUCERS 2007

A2 - Delapierre, G.

A2 - Puers, R.

PB - IEEE

CY - Piscataway, NJ

T2 - 14th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS 2007

Y2 - 10 June 2007 through 14 June 2007

ER -

Tong HD, Jansen HV, Tas NR, Gadgil VJ, Carlen ET, van den Berg A. Simple technique for direct patterning of nanowires using a nanoslit shadow-mask. In Delapierre G, Puers R, editors, TRANSDUCERS 2007: 2007 International Solid-State Sensors, Actuators and Microsystems Conference. Piscataway, NJ: IEEE. 2007. p. 191-194. (Proceedings of TRANSDUCERS 2007 - International Solid-State Sensors, Actuators and Microsystems Conference). doi: 10.1109/SENSOR.2007.4300103

Simple technique for direct patterning of nanowires using a nanoslit shadow-mask

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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Cite this