Simulating NBTI degradation in arbitrary stressed analog/mixed-signal environments

Jinbo Wan (Editor), J. Wan (Editor), Hans G. Kerkhoff

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    7 Citations (Scopus)

    Abstract

    A compact negative bias temperature instability (NBTI) model is presented by iteratively solving the RD equations in a simple way. The new compact model can handle arbitrary stress conditions without solving time-consuming equations, and is hence, suitable for analogue/mixed-signal NBTI simulations in SPICE-like environments. The model has been implemented in Cadence ADE with Verilog-A and also takes the stochastic effect of ageing into account. The simulation speed has increased at least a thousand times compared to classical RD models. The performance of the model has been validated by both RD theoretical solutions and 140-nm CMOS silicon measurement.
    Original languageUndefined
    Pages (from-to)137-148
    Number of pages12
    JournalIEEE transactions on nanotechnology
    Volume15
    Issue number2
    DOIs
    Publication statusPublished - Mar 2016

    Keywords

    • analog
    • reaction-diffusion
    • Reliability
    • IR-100111
    • METIS-316868
    • EWI-26908
    • CMOS
    • NBTI

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