Abstract
Original language | Undefined |
---|---|
Pages (from-to) | 137-148 |
Number of pages | 12 |
Journal | IEEE transactions on nanotechnology |
Volume | 15 |
Issue number | 2 |
DOIs | |
Publication status | Published - Mar 2016 |
Keywords
- analog
- reaction-diffusion
- Reliability
- IR-100111
- METIS-316868
- EWI-26908
- CMOS
- NBTI
Cite this
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Simulating NBTI degradation in arbitrary stressed analog/mixed-signal environments. / Wan, Jinbo (Editor); Wan, J. (Editor); Kerkhoff, Hans G.
In: IEEE transactions on nanotechnology, Vol. 15, No. 2, 03.2016, p. 137-148.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Simulating NBTI degradation in arbitrary stressed analog/mixed-signal environments
AU - Kerkhoff, Hans G.
A2 - Wan, Jinbo
A2 - Wan, J.
N1 - eemcs-eprint-26908
PY - 2016/3
Y1 - 2016/3
N2 - A compact negative bias temperature instability (NBTI) model is presented by iteratively solving the RD equations in a simple way. The new compact model can handle arbitrary stress conditions without solving time-consuming equations, and is hence, suitable for analogue/mixed-signal NBTI simulations in SPICE-like environments. The model has been implemented in Cadence ADE with Verilog-A and also takes the stochastic effect of ageing into account. The simulation speed has increased at least a thousand times compared to classical RD models. The performance of the model has been validated by both RD theoretical solutions and 140-nm CMOS silicon measurement.
AB - A compact negative bias temperature instability (NBTI) model is presented by iteratively solving the RD equations in a simple way. The new compact model can handle arbitrary stress conditions without solving time-consuming equations, and is hence, suitable for analogue/mixed-signal NBTI simulations in SPICE-like environments. The model has been implemented in Cadence ADE with Verilog-A and also takes the stochastic effect of ageing into account. The simulation speed has increased at least a thousand times compared to classical RD models. The performance of the model has been validated by both RD theoretical solutions and 140-nm CMOS silicon measurement.
KW - analog
KW - reaction-diffusion
KW - Reliability
KW - IR-100111
KW - METIS-316868
KW - EWI-26908
KW - CMOS
KW - NBTI
U2 - 10.1109/TNANO.2015.2505092
DO - 10.1109/TNANO.2015.2505092
M3 - Article
VL - 15
SP - 137
EP - 148
JO - IEEE transactions on nanotechnology
JF - IEEE transactions on nanotechnology
SN - 1536-125X
IS - 2
ER -