Simulating NBTI degradation in arbitrary stressed analog/mixed-signal environments

Jinbo Wan, Hans G. Kerkhoff, Jaap Bisschop

    Research output: Contribution to journalArticleAcademicpeer-review

    11 Citations (Scopus)
    18 Downloads (Pure)

    Abstract

    A compact negative bias temperature instability (NBTI) model is presented by iteratively solving the RD equations in a simple way. The new compact model can handle arbitrary stress conditions without solving time-consuming equations, and is hence, suitable for analogue/mixed-signal NBTI simulations in SPICE-like environments. The model has been implemented in Cadence ADE with Verilog-A and also takes the stochastic effect of ageing into account. The simulation speed has increased at least a thousand times compared to classical RD models. The performance of the model has been validated by both RD theoretical solutions and 140-nm CMOS silicon measurement.
    Original languageEnglish
    Pages (from-to)137-148
    Number of pages12
    JournalIEEE transactions on nanotechnology
    Volume15
    Issue number2
    DOIs
    Publication statusPublished - Mar 2016
    EventFinal Workshop on Manufacturable and Dependable Multicore Architectures at Nanoscale, MEDIAN 2015 - Tallinn, Estonia
    Duration: 10 Nov 201511 Nov 2015

    Keywords

    • Analog
    • Reaction-diffusion
    • Reliability
    • CMOS
    • NBTI
    • n/a OA procedure

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