Simulating NBTI degradation in arbitrary stressed analog/mixed-signal environments

Jinbo Wan (Editor), J. Wan (Editor), Hans G. Kerkhoff

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)

Abstract

A compact negative bias temperature instability (NBTI) model is presented by iteratively solving the RD equations in a simple way. The new compact model can handle arbitrary stress conditions without solving time-consuming equations, and is hence, suitable for analogue/mixed-signal NBTI simulations in SPICE-like environments. The model has been implemented in Cadence ADE with Verilog-A and also takes the stochastic effect of ageing into account. The simulation speed has increased at least a thousand times compared to classical RD models. The performance of the model has been validated by both RD theoretical solutions and 140-nm CMOS silicon measurement.
Original languageUndefined
Pages (from-to)137-148
Number of pages12
JournalIEEE transactions on nanotechnology
Volume15
Issue number2
DOIs
Publication statusPublished - Mar 2016

Keywords

  • analog
  • reaction-diffusion
  • Reliability
  • IR-100111
  • METIS-316868
  • EWI-26908
  • CMOS
  • NBTI

Cite this

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Simulating NBTI degradation in arbitrary stressed analog/mixed-signal environments. / Wan, Jinbo (Editor); Wan, J. (Editor); Kerkhoff, Hans G.

In: IEEE transactions on nanotechnology, Vol. 15, No. 2, 03.2016, p. 137-148.

Research output: Contribution to journalArticleAcademicpeer-review

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