Simultaneous extraction of threshold voltage and mobility degradation from on-the-fly NBTI measurements

Rudolf W. Herfst, Jurriaan Schmitz, Andries J. Scholten

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    3 Citations (Scopus)

    Abstract

    Conventional on-the-fly characterization of NBTI translates measured changes in drain current to a threshold voltage shift only. In this paper, we show how to extend this method to the simultaneous determination of threshold voltage and zero-field-mobility degradation by. This is achieved by using a Vector Network Analyzer for OTF characterization of gds and gm. For the technology under study, we have found that degradation in the zero-field mobility is responsible for at most 10% of the drain current change. Effective mobility, on the other hand, does change as a direct consequence of the threshold-voltage shift.
    Original languageEnglish
    Title of host publication2011 IEEE International Reliability Physics Symposium, IRPS 2011
    Subtitle of host publicationMonterey, California, USA, 10-14 April 2011
    PublisherIEEE Reliability Society
    PagesXT.6.1-6.4
    Number of pages4
    ISBN (Print)978-1-4244-9113-1
    DOIs
    Publication statusPublished - 10 Apr 2011
    Event49th Annual IEEE International Reliability Physics Symposium, IRPS 2011 - Monterey, United States
    Duration: 10 Apr 201114 Apr 2011
    Conference number: 49

    Conference

    Conference49th Annual IEEE International Reliability Physics Symposium, IRPS 2011
    Abbreviated titleIRPS
    CountryUnited States
    CityMonterey
    Period10/04/1114/04/11

    Keywords

    • METIS-277730
    • IR-77950
    • On The Fly
    • EWI-20213
    • RF
    • NBTI
    • Reliability

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  • Cite this

    Herfst, R. W., Schmitz, J., & Scholten, A. J. (2011). Simultaneous extraction of threshold voltage and mobility degradation from on-the-fly NBTI measurements. In 2011 IEEE International Reliability Physics Symposium, IRPS 2011: Monterey, California, USA, 10-14 April 2011 (pp. XT.6.1-6.4). IEEE Reliability Society. https://doi.org/10.1109/IRPS.2011.5784607