Abstract
Conventional on-the-fly characterization of NBTI translates measured changes in drain current to a threshold voltage shift only. In this paper, we show how to extend this method to the simultaneous determination of threshold voltage and zero-field-mobility degradation by. This is achieved by using a Vector Network Analyzer for OTF characterization of gds and gm. For the technology under study, we have found that degradation in the zero-field mobility is responsible for at most 10% of the drain current change. Effective mobility, on the other hand, does change as a direct consequence of the threshold-voltage shift.
Original language | English |
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Title of host publication | 2011 IEEE International Reliability Physics Symposium, IRPS 2011 |
Subtitle of host publication | Monterey, California, USA, 10-14 April 2011 |
Publisher | IEEE Reliability Society |
Pages | XT.6.1-6.4 |
Number of pages | 4 |
ISBN (Print) | 978-1-4244-9113-1 |
DOIs | |
Publication status | Published - 10 Apr 2011 |
Event | 49th Annual IEEE International Reliability Physics Symposium, IRPS 2011 - Monterey, United States Duration: 10 Apr 2011 → 14 Apr 2011 Conference number: 49 |
Conference
Conference | 49th Annual IEEE International Reliability Physics Symposium, IRPS 2011 |
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Abbreviated title | IRPS |
Country | United States |
City | Monterey |
Period | 10/04/11 → 14/04/11 |
Keywords
- METIS-277730
- IR-77950
- On The Fly
- EWI-20213
- RF
- NBTI
- Reliability