Single-charge occupation in ambipolar quantum dots

A. J. Sousa de Almeida, A. Marquez Seco, T. van den Berg, B. van de Ven, F. Bruijnes, S. V. Amitonov, F. A. Zwanenburg

Research output: Working paperPreprintAcademic

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Abstract

We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and few-hole regimes in the QDs of our ambipolar device by active charge sensing.
Original languageEnglish
PublisherArXiv.org
Number of pages13
DOIs
Publication statusPublished - 14 Jan 2020

Keywords

  • cond-mat.mes-hall
  • quant-ph

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