@techreport{a6957f1c696a4dc78c6cd7be00f731e5,
title = "Single-charge occupation in ambipolar quantum dots",
abstract = " We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and few-hole regimes in the QDs of our ambipolar device by active charge sensing. ",
keywords = "cond-mat.mes-hall, quant-ph",
author = "{de Almeida}, {A. J. Sousa} and Seco, {A. Marquez} and {van den Berg}, T. and {van de Ven}, B. and F. Bruijnes and Amitonov, {S. V.} and Zwanenburg, {F. A.}",
note = "13 pages, 4 figures",
year = "2020",
month = jan,
day = "14",
doi = "10.48550/arXiv.2001.05045",
language = "English",
publisher = "ArXiv.org",
type = "WorkingPaper",
institution = "ArXiv.org",
}