Single-charge occupation in ambipolar quantum dots

A. J. Sousa de Almeida; A. Marquez Seco; T. van den Berg; B. van de Ven; F. Bruijnes; S. V. Amitonov; F. A. Zwanenburg

doi:10.48550/arXiv.2001.05045

Single-charge occupation in ambipolar quantum dots

A. J. Sousa de Almeida
, A. Marquez Seco
, T. van den Berg
, B. van de Ven
, F. Bruijnes
, S. V. Amitonov
, F. A. Zwanenburg

Research output: Working paper › Preprint › Academic

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Abstract

We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and few-hole regimes in the QDs of our ambipolar device by active charge sensing.

Original language	English
Publisher	ArXiv.org
Number of pages	13
DOIs	https://doi.org/10.48550/arXiv.2001.05045
Publication status	Published - 14 Jan 2020

Keywords

cond-mat.mes-hall
quant-ph

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10.48550/arXiv.2001.05045

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Ambipolar charge sensing of few-charge quantum dots
Sousa de Almeida, A. J., Seco, A. M., van den Berg, T., van de Ven, B., Bruijnes, F., Amitonov, S. V. & Zwanenburg, F. A., 15 May 2020, In: Physical review B: Covering condensed matter and materials physics. 101, 20, 201301.
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Cite this

@techreport{a6957f1c696a4dc78c6cd7be00f731e5,

title = "Single-charge occupation in ambipolar quantum dots",

abstract = " We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and few-hole regimes in the QDs of our ambipolar device by active charge sensing. ",

keywords = "cond-mat.mes-hall, quant-ph",

author = "\{de Almeida\}, \{A. J. Sousa\} and Seco, \{A. Marquez\} and \{van den Berg\}, T. and \{van de Ven\}, B. and F. Bruijnes and Amitonov, \{S. V.\} and Zwanenburg, \{F. A.\}",

note = "13 pages, 4 figures",

year = "2020",

month = jan,

day = "14",

doi = "10.48550/arXiv.2001.05045",

language = "English",

publisher = "ArXiv.org",

type = "WorkingPaper",

institution = "ArXiv.org",

}

TY - UNPB

T1 - Single-charge occupation in ambipolar quantum dots

AU - de Almeida, A. J. Sousa

AU - Seco, A. Marquez

AU - van den Berg, T.

AU - van de Ven, B.

AU - Bruijnes, F.

AU - Amitonov, S. V.

AU - Zwanenburg, F. A.

N1 - 13 pages, 4 figures

PY - 2020/1/14

Y1 - 2020/1/14

N2 - We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and few-hole regimes in the QDs of our ambipolar device by active charge sensing.

AB - We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and few-hole regimes in the QDs of our ambipolar device by active charge sensing.

KW - cond-mat.mes-hall

KW - quant-ph

U2 - 10.48550/arXiv.2001.05045

DO - 10.48550/arXiv.2001.05045

M3 - Preprint

BT - Single-charge occupation in ambipolar quantum dots

PB - ArXiv.org

ER -

Single-charge occupation in ambipolar quantum dots

Abstract

Keywords

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Research output

Ambipolar charge sensing of few-charge quantum dots

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