Single-charge transport in ambipolar silicon nanoscale field-effect transistors

Filipp Mueller, F. Müller, Georgios Konstantaras, Wilfred Gerard van der Wiel, Floris Arnoud Zwanenburg

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    7 Citations (Scopus)

    Abstract

    We report single-charge transport in ambipolar nanoscale MOSFETs, electrostatically defined in near-intrinsic silicon. We use the ambipolarity to demonstrate the confinement of either a few electrons or a few holes in exactly the same crystalline environment underneath a gate electrode. We find similar electron and hole quantum dot properties while the mobilities differ quantitatively like in microscale devices. The understanding and control of individual electrons and holes are essential for spin-based quantum information processing.
    Original languageUndefined
    Pages (from-to)172101
    Number of pages5
    JournalApplied physics letters
    Volume106
    DOIs
    Publication statusPublished - 27 Apr 2015

    Keywords

    • EWI-26493
    • IR-98292
    • METIS-315051

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