Single-crystal thin film transistor by grain-filter location-controlled excimer-laser crystallization

Barry D. Van Dijk*, Paul Ch Van Der Wilt, G. J. Bertens, Lis K. Nanver, Ryoichi Ishihara

*Corresponding author for this work

Research output: Contribution to journalConference articleAcademicpeer-review

Abstract

Thin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm2/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm2/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.

Original languageEnglish
Pages (from-to)299-304
Number of pages6
JournalMaterials Research Society symposia proceedings
Volume685
DOIs
Publication statusPublished - 1 Dec 2001
Externally publishedYes
EventMRS Spring Meeting 2001 - San Francisco, United States
Duration: 15 Apr 200120 Apr 2001

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