TY - JOUR
T1 - Single-crystal thin film transistor by grain-filter location-controlled excimer-laser crystallization
AU - Van Dijk, Barry D.
AU - Van Der Wilt, Paul Ch
AU - Bertens, G. J.
AU - Nanver, Lis K.
AU - Ishihara, Ryoichi
PY - 2001/12/1
Y1 - 2001/12/1
N2 - Thin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm2/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm2/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.
AB - Thin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm2/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm2/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.
UR - http://www.scopus.com/inward/record.url?scp=34249908636&partnerID=8YFLogxK
U2 - 10.1557/PROC-685-D12.3.1
DO - 10.1557/PROC-685-D12.3.1
M3 - Conference article
AN - SCOPUS:34249908636
SN - 0272-9172
VL - 685
SP - 299
EP - 304
JO - Materials Research Society symposia proceedings
JF - Materials Research Society symposia proceedings
T2 - MRS Spring Meeting 2001
Y2 - 15 April 2001 through 20 April 2001
ER -