Single-crystal thin film transistor by grain-filter location-controlled excimer-laser crystallization

Barry D. Van Dijk; Paul Ch Van Der Wilt; G. J. Bertens; Lis K. Nanver; Ryoichi Ishihara

doi:10.1557/PROC-685-D12.3.1

Single-crystal thin film transistor by grain-filter location-controlled excimer-laser crystallization

Barry D. Van Dijk^*
, Paul Ch Van Der Wilt
, G. J. Bertens
, Lis K. Nanver
, Ryoichi Ishihara

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › Academic › peer-review

1 Citation (Scopus)

Abstract

Thin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm²/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm²/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.

Original language	English
Pages (from-to)	299-304
Number of pages	6
Journal	Materials Research Society symposia proceedings
Volume	685
DOIs	https://doi.org/10.1557/PROC-685-D12.3.1
Publication status	Published - 1 Dec 2001
Externally published	Yes
Event	MRS Spring Meeting 2001 - San Francisco, United States Duration: 15 Apr 2001 → 20 Apr 2001

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@article{f8fe0b2d6bf346518081b7ead01178e5,

title = "Single-crystal thin film transistor by grain-filter location-controlled excimer-laser crystallization",

abstract = "Thin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm2/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm2/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.",

author = "\{Van Dijk\}, \{Barry D.\} and \{Van Der Wilt\}, \{Paul Ch\} and Bertens, \{G. J.\} and Nanver, \{Lis K.\} and Ryoichi Ishihara",

year = "2001",

month = dec,

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doi = "10.1557/PROC-685-D12.3.1",

language = "English",

volume = "685",

pages = "299--304",

journal = "Materials Research Society symposia proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "MRS Spring Meeting 2001 ; Conference date: 15-04-2001 Through 20-04-2001",

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TY - JOUR

T1 - Single-crystal thin film transistor by grain-filter location-controlled excimer-laser crystallization

AU - Van Dijk, Barry D.

AU - Van Der Wilt, Paul Ch

AU - Bertens, G. J.

AU - Nanver, Lis K.

AU - Ishihara, Ryoichi

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Thin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm2/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm2/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.

AB - Thin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm2/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm2/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.

UR - https://www.scopus.com/pages/publications/34249908636

U2 - 10.1557/PROC-685-D12.3.1

DO - 10.1557/PROC-685-D12.3.1

M3 - Conference article

AN - SCOPUS:34249908636

SN - 0272-9172

VL - 685

SP - 299

EP - 304

JO - Materials Research Society symposia proceedings

JF - Materials Research Society symposia proceedings

T2 - MRS Spring Meeting 2001

Y2 - 15 April 2001 through 20 April 2001

ER -

Single-crystal thin film transistor by grain-filter location-controlled excimer-laser crystallization

Abstract

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