Single, double, and triple quantum dots in Ge/Si nanowires

F.N.M. Froning; M.K. Rehmann; Joost  Ridderbos; Floris Arnoud Zwanenburg; Ang Li; Erik P.A.M. Bakkers; D.M. Zumbuhl; F.R. Braakma

doi:10.1063/1.5042501

Single, double, and triple quantum dots in Ge/Si nanowires

F.N.M. Froning, M.K. Rehmann, Joost Ridderbos, Floris Arnoud Zwanenburg, Ang Li, Erik P.A.M. Bakkers, D.M. Zumbuhl, F.R. Braakma (Corresponding Author)

Research output: Contribution to journal › Article › Academic › peer-review

7 Citations (Scopus)

24 Downloads (Pure)

Abstract

We report highly tunable control of holes in Ge/Si core/shell nanowires. We demonstrate the ability to create single quantum dots of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size, we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quantum dot configuration, we observe Pauli spin blockade. These results open the way to perform hole spin qubit experiments in these devices.

Original language	English
Article number	073102
Number of pages	5
Journal	Applied physics letters
Volume	113
Issue number	7
DOIs	https://doi.org/10.1063/1.5042501
Publication status	Published - 15 Aug 2018

Keywords

Nanocrystals, nanowires, core/shell nanowires, coupled quantum dots, double quantum dots, occupation numbers, single quantum dot, spin blockade, triple quatum, tunable control

Access to Document

10.1063/1.5042501

1.5042501Final published version, 1.45 MB

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title = "Single, double, and triple quantum dots in Ge/Si nanowires",

abstract = "We report highly tunable control of holes in Ge/Si core/shell nanowires. We demonstrate the ability to create single quantum dots of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size, we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quantum dot configuration, we observe Pauli spin blockade. These results open the way to perform hole spin qubit experiments in these devices.",

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doi = "10.1063/1.5042501",

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Single, double, and triple quantum dots in Ge/Si nanowires. / Froning, F.N.M.; Rehmann, M.K.; Ridderbos, Joost ; Zwanenburg, Floris Arnoud; Li, Ang; Bakkers, Erik P.A.M.; Zumbuhl, D.M.; Braakma, F.R. (Corresponding Author).

In: Applied physics letters, Vol. 113, No. 7, 073102, 15.08.2018.

Research output: Contribution to journal › Article › Academic › peer-review

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AU - Froning, F.N.M.

AU - Rehmann, M.K.

AU - Ridderbos, Joost

AU - Zwanenburg, Floris Arnoud

AU - Li, Ang

AU - Bakkers, Erik P.A.M.

AU - Zumbuhl, D.M.

AU - Braakma, F.R.

PY - 2018/8/15

Y1 - 2018/8/15

N2 - We report highly tunable control of holes in Ge/Si core/shell nanowires. We demonstrate the ability to create single quantum dots of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size, we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quantum dot configuration, we observe Pauli spin blockade. These results open the way to perform hole spin qubit experiments in these devices.

AB - We report highly tunable control of holes in Ge/Si core/shell nanowires. We demonstrate the ability to create single quantum dots of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size, we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quantum dot configuration, we observe Pauli spin blockade. These results open the way to perform hole spin qubit experiments in these devices.

KW - Nanocrystals, nanowires, core/shell nanowires, coupled quantum dots, double quantum dots, occupation numbers, single quantum dot, spin blockade, triple quatum, tunable control

U2 - 10.1063/1.5042501

DO - 10.1063/1.5042501

M3 - Article

VL - 113

JO - Applied physics letters

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