Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon

P.C. Spruijtenburg, Joost Ridderbos, Joost Ridderbos, Filipp Mueller, F. Müller, Anne W. Leenstra, M. Brauns, Antonius A.I. Aarnink, Wilfred Gerard van der Wiel, Floris Arnoud Zwanenburg

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    Abstract

    In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO2 using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5–10 meV and lines of increased conductance as a result of resonant tunneling through additional available hole states.
    Original languageUndefined
    Pages (from-to)192105
    Number of pages4
    JournalApplied physics letters
    Volume102
    Issue number19
    DOIs
    Publication statusPublished - 14 May 2013

    Keywords

    • EWI-24386
    • IR-89151
    • METIS-302682

    Cite this

    Spruijtenburg, P. C., Ridderbos, J., Ridderbos, J., Mueller, F., Müller, F., Leenstra, A. W., ... Zwanenburg, F. A. (2013). Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon. Applied physics letters, 102(19), 192105. https://doi.org/10.1063/1.4804555