Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon

Paul C. Spruijtenburg, Joost Ridderbos, Filipp Müller, Anne W. Leenstra, Matthias Brauns, Antonius A.I. Aarnink, Wilfred G. van der Wiel, Floris A. Zwanenburg

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    Abstract

    In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO2 using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5–10 meV and lines of increased conductance as a result of resonant tunneling through additional available hole states.
    Original languageEnglish
    Pages (from-to)192105
    Number of pages4
    JournalApplied physics letters
    Volume102
    Issue number19
    DOIs
    Publication statusPublished - 14 May 2013

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