In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO2 using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5–10 meV and lines of increased conductance as a result of resonant tunneling through additional available hole states.
Spruijtenburg, P. C., Ridderbos, J., Ridderbos, J., Mueller, F., Müller, F., Leenstra, A. W., ... Zwanenburg, F. A.
(2013). Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon
. Applied physics letters
(19), 192105. https://doi.org/10.1063/1.4804555