Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon

P. C. Spruijtenburg; J. Ridderbos; F. Mueller; A. W. Leenstra; M. Brauns; A. A. I. Aarnink; W. G. van der Wiel; F. A. Zwanenburg

doi:10.48550/arXiv.1304.2870

Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon

P. C. Spruijtenburg
, J. Ridderbos
, F. Mueller
, A. W. Leenstra
, M. Brauns
, A. A. I. Aarnink
, W. G. van der Wiel
, F. A. Zwanenburg

Nano Electronics

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Abstract

In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5--10 meV, and lines of increased conductance as a result of resonant tunneling through additional available hole states.

Original language	English
DOIs	https://doi.org/10.48550/arXiv.1304.2870
Publication status	Published - 10 Apr 2013

Keywords

cond-mat.mes-hall

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10.48550/arXiv.1304.2870

1304.2870v3Final published version, 3.62 MB

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Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon
Spruijtenburg, P. C., Ridderbos, J., Müller, F., Leenstra, A. W., Brauns, M., Aarnink, A. A. I., van der Wiel, W. G. & Zwanenburg, F. A., 14 May 2013, In: Applied physics letters. 102, 19, p. 192105 4 p.
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title = "Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon",

abstract = " In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO\$\_2\$ using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5--10 meV, and lines of increased conductance as a result of resonant tunneling through additional available hole states. ",

keywords = "cond-mat.mes-hall",

author = "Spruijtenburg, \{P. C.\} and J. Ridderbos and F. Mueller and Leenstra, \{A. W.\} and M. Brauns and Aarnink, \{A. A. I.\} and \{van der Wiel\}, \{W. G.\} and Zwanenburg, \{F. A.\}",

note = "4 pages, 4 figures. This article has been submitted to Applied Physics Letters",

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AU - Spruijtenburg, P. C.

AU - Ridderbos, J.

AU - Mueller, F.

AU - Leenstra, A. W.

AU - Brauns, M.

AU - Aarnink, A. A. I.

AU - van der Wiel, W. G.

AU - Zwanenburg, F. A.

N1 - 4 pages, 4 figures. This article has been submitted to Applied Physics Letters

PY - 2013/4/10

Y1 - 2013/4/10

N2 - In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5--10 meV, and lines of increased conductance as a result of resonant tunneling through additional available hole states.

AB - In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5--10 meV, and lines of increased conductance as a result of resonant tunneling through additional available hole states.

KW - cond-mat.mes-hall

U2 - 10.48550/arXiv.1304.2870

DO - 10.48550/arXiv.1304.2870

M3 - Preprint

BT - Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon

ER -

Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon

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Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon

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