Single-mask thermal displacement sensor in MEMS

B. Krijnen, R.P. Hogervorst, Johannes Bernardus Charles Engelen, J.W. van Dijk, Dannis Michel Brouwer, Leon Abelmann

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In this work we describe a one degree- of-freedom microelectromechanical thermal displacement sensor integrated with an actuated stage. The system was fabricated in the device layer of a silicon-on-insulator wafer using a single-mask process. The sensor is based on the temperature dependent electrical resistivity of silicon and the heat transfer by conduction through a thin layer of air. On a measurement range of 50 μm and using a measurement bandwidth of 30 Hz, the 1-sigma noise corresponds to 3.47 nm. The power consumption of the sensor is 209 mW, almost completely independent of stage position. The drift of the sensor over a measurement period of 32 hours was 32 nm.
Original languageUndefined
Title of host publicationProceedings of the 21st Micromechanics and Micro systems Europe workshop (MME 2010)
Place of PublicationEnschede
PublisherUniversity of Twente - Transducers Science and Technology (TST)
Number of pages4
ISBN (Print)978-90-81673716
Publication statusPublished - Sep 2010
Event21st Micromechanics and Microsystems Europe Workshop, MME 2010 - University of Twente, Enschede, Netherlands
Duration: 26 Sep 201029 Sep 2010
Conference number: 21

Publication series

PublisherUniversity of Twente, Transducers Science and Technology (TST)


Workshop21st Micromechanics and Microsystems Europe Workshop, MME 2010
Abbreviated titleMME


  • METIS-267229
  • IR-74824
  • Manipulator
  • MEMS
  • SOI
  • TST-SMI: Formerly in EWI-SMI
  • precision stage
  • silicon resistivity
  • lumped model
  • thermal displacement sensor
  • TST-uSPAM: micro Scanning Probe Array Memory
  • EWI-18874

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