Single-mask thermal displacement sensor in MEMS

B. Krijnen; R.P. Hogervorst; J.B.C. Engelen; J.W. van Dijk; D.M. Brouwer; L. Abelmann

Single-mask thermal displacement sensor in MEMS

B. Krijnen
, R.P. Hogervorst
, J.B.C. Engelen
, J.W. van Dijk
, D.M. Brouwer
, L. Abelmann

Faculty of Engineering Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

222 Downloads (Pure)

Abstract

In this work we describe a one degree- of-freedom microelectromechanical thermal displacement sensor integrated with an actuated stage. The system was fabricated in the device layer of a silicon-on-insulator wafer using a single-mask process. The sensor is based on the temperature dependent electrical resistivity of silicon and the heat transfer by conduction through a thin layer of air. On a measurement range of 50 μm and using a measurement bandwidth of 30 Hz, the 1-sigma noise corresponds to 3.47 nm. The power consumption of the sensor is 209 mW, almost completely independent of stage position. The drift of the sensor over a measurement period of 32 hours was 32 nm.

Original language	English
Title of host publication	21st Micromechanics and Micro systems Europe workshop (MME 2010)
Subtitle of host publication	Abstracts
Place of Publication	Enschede
Publisher	University of Twente - Transducers Science and Technology (TST)
Pages	52-55
Number of pages	4
ISBN (Print)	978-90-816737-1-6
Publication status	Published - Sept 2010
Event	21st Micromechanics and Microsystems Europe Workshop, MME 2010 - University of Twente, Enschede, Netherlands Duration: 26 Sept 2010 → 29 Sept 2010 Conference number: 21

Workshop

Workshop	21st Micromechanics and Microsystems Europe Workshop, MME 2010
Abbreviated title	MME
Country/Territory	Netherlands
City	Enschede
Period	26/09/10 → 29/09/10

Keywords

Manipulator
MEMS
SOI
TST-SMI: Formerly in EWI-SMI
Precision stage
Silicon resistivity
Lumped model
Thermal displacement sensor
TST-uSPAM: micro Scanning Probe Array Memory

Access to Document

AbstractFinal published version, 253 KB

1 Book editing

MME 2010, 21st Micromechanics and Micro systems Europe Workshop: Abstracts
Abelmann, L. (Editor), Groenland, H. (Editor), van Honschoten, J. (Editor) & Verputten, H. (Editor), Sept 2010, Enschede, The Netherlands: University of Twente, Transducers Science and Technology. 326 p.
Research output: Book/Report › Book editing › Academic

Open Access
File

Cite this

@inproceedings{5a3542762aa7405fb7af3523c1c6add5,

title = "Single-mask thermal displacement sensor in MEMS",

abstract = "In this work we describe a one degree- of-freedom microelectromechanical thermal displacement sensor integrated with an actuated stage. The system was fabricated in the device layer of a silicon-on-insulator wafer using a single-mask process. The sensor is based on the temperature dependent electrical resistivity of silicon and the heat transfer by conduction through a thin layer of air. On a measurement range of 50 μm and using a measurement bandwidth of 30 Hz, the 1-sigma noise corresponds to 3.47 nm. The power consumption of the sensor is 209 mW, almost completely independent of stage position. The drift of the sensor over a measurement period of 32 hours was 32 nm.",

keywords = "Manipulator, MEMS, SOI, TST-SMI: Formerly in EWI-SMI, Precision stage, Silicon resistivity, Lumped model, Thermal displacement sensor, TST-uSPAM: micro Scanning Probe Array Memory",

author = "B. Krijnen and R.P. Hogervorst and J.B.C. Engelen and \{van Dijk\}, J.W. and D.M. Brouwer and L. Abelmann",

year = "2010",

month = sep,

language = "English",

isbn = "978-90-816737-1-6",

pages = "52--55",

booktitle = "21st Micromechanics and Micro systems Europe workshop (MME 2010)",

publisher = "University of Twente - Transducers Science and Technology (TST)",

note = "21st Micromechanics and Microsystems Europe Workshop, MME 2010, MME ; Conference date: 26-09-2010 Through 29-09-2010",

}

Krijnen, B, Hogervorst, RP, Engelen, JBC, van Dijk, JW, Brouwer, DM & Abelmann, L 2010, Single-mask thermal displacement sensor in MEMS. in 21st Micromechanics and Micro systems Europe workshop (MME 2010): Abstracts. University of Twente - Transducers Science and Technology (TST), Enschede, pp. 52-55, 21st Micromechanics and Microsystems Europe Workshop, MME 2010, Enschede, Netherlands, 26/09/10.

Single-mask thermal displacement sensor in MEMS. / Krijnen, B.; Hogervorst, R.P.; Engelen, J.B.C. et al.
21st Micromechanics and Micro systems Europe workshop (MME 2010): Abstracts. Enschede: University of Twente - Transducers Science and Technology (TST), 2010. p. 52-55.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Single-mask thermal displacement sensor in MEMS

AU - Krijnen, B.

AU - Hogervorst, R.P.

AU - Engelen, J.B.C.

AU - van Dijk, J.W.

AU - Brouwer, D.M.

AU - Abelmann, L.

N1 - Conference code: 21

PY - 2010/9

Y1 - 2010/9

N2 - In this work we describe a one degree- of-freedom microelectromechanical thermal displacement sensor integrated with an actuated stage. The system was fabricated in the device layer of a silicon-on-insulator wafer using a single-mask process. The sensor is based on the temperature dependent electrical resistivity of silicon and the heat transfer by conduction through a thin layer of air. On a measurement range of 50 μm and using a measurement bandwidth of 30 Hz, the 1-sigma noise corresponds to 3.47 nm. The power consumption of the sensor is 209 mW, almost completely independent of stage position. The drift of the sensor over a measurement period of 32 hours was 32 nm.

AB - In this work we describe a one degree- of-freedom microelectromechanical thermal displacement sensor integrated with an actuated stage. The system was fabricated in the device layer of a silicon-on-insulator wafer using a single-mask process. The sensor is based on the temperature dependent electrical resistivity of silicon and the heat transfer by conduction through a thin layer of air. On a measurement range of 50 μm and using a measurement bandwidth of 30 Hz, the 1-sigma noise corresponds to 3.47 nm. The power consumption of the sensor is 209 mW, almost completely independent of stage position. The drift of the sensor over a measurement period of 32 hours was 32 nm.

KW - Manipulator

KW - MEMS

KW - SOI

KW - TST-SMI: Formerly in EWI-SMI

KW - Precision stage

KW - Silicon resistivity

KW - Lumped model

KW - Thermal displacement sensor

KW - TST-uSPAM: micro Scanning Probe Array Memory

M3 - Conference contribution

SN - 978-90-816737-1-6

SP - 52

EP - 55

BT - 21st Micromechanics and Micro systems Europe workshop (MME 2010)

PB - University of Twente - Transducers Science and Technology (TST)

CY - Enschede

T2 - 21st Micromechanics and Microsystems Europe Workshop, MME 2010

Y2 - 26 September 2010 through 29 September 2010

ER -

Single-mask thermal displacement sensor in MEMS

Abstract

Workshop

Keywords

Access to Document

Fingerprint

Research output

MME 2010, 21st Micromechanics and Micro systems Europe Workshop: Abstracts

Cite this