Single shot damage mechanism of Mo/Si multilayer optics under intense pulsed XUV-exposures

A.R. Khorsand; R. Sobierajski; E. Louis; S. Bruijn; R.W.E. van de Kruijs; J. Krzywinski; S. Hau-Riege; A. Gleeson; E.M. Gullikson; F. Bijkerk

doi:10.1364/OE.18.000700

Single shot damage mechanism of Mo/Si multilayer optics under intense pulsed XUV-exposures

A.R. Khorsand, R. Sobierajski, E. Louis, S. Bruijn, R.W.E. van de Kruijs, J. Krzywinski, S. Hau-Riege, A. Gleeson, E.M. Gullikson, F. Bijkerk

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Abstract

We investigated single shot damage of Mo/Si multilayer coatings exposed to the intense fs XUV radiation at the Free-electron LASer facility in Hamburg - FLASH. The interaction process was studied in situ by XUV reflectometry, time resolved optical microscopy, and “post-mortem” by interference-polarizing optical microscopy (with Nomarski contrast), atomic force microscopy, and scanning transmission electron microcopy. An ultrafast molybdenum silicide formation due to enhanced atomic diffusion in melted silicon has been determined to be the key process in the damage mechanism. The influence of the energy diffusion on the damage process was estimated. The results are of significance for the design of multilayer optics for a new generation of pulsed (from atto- to nanosecond) XUV sources.

Original language	English
Pages (from-to)	700-712
Number of pages	13
Journal	Optics express
Volume	18
Issue number	2
DOIs	https://doi.org/10.1364/OE.18.000700
Publication status	Published - 2010

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title = "Single shot damage mechanism of Mo/Si multilayer optics under intense pulsed XUV-exposures",

abstract = "We investigated single shot damage of Mo/Si multilayer coatings exposed to the intense fs XUV radiation at the Free-electron LASer facility in Hamburg - FLASH. The interaction process was studied in situ by XUV reflectometry, time resolved optical microscopy, and “post-mortem” by interference-polarizing optical microscopy (with Nomarski contrast), atomic force microscopy, and scanning transmission electron microcopy. An ultrafast molybdenum silicide formation due to enhanced atomic diffusion in melted silicon has been determined to be the key process in the damage mechanism. The influence of the energy diffusion on the damage process was estimated. The results are of significance for the design of multilayer optics for a new generation of pulsed (from atto- to nanosecond) XUV sources.",

author = "A.R. Khorsand and R. Sobierajski and E. Louis and S. Bruijn and {van de Kruijs}, R.W.E. and J. Krzywinski and S. Hau-Riege and A. Gleeson and E.M. Gullikson and F. Bijkerk",

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doi = "10.1364/OE.18.000700",

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T1 - Single shot damage mechanism of Mo/Si multilayer optics under intense pulsed XUV-exposures

AU - Khorsand, A.R.

AU - Sobierajski, R.

AU - Louis, E.

AU - Bruijn, S.

AU - van de Kruijs, R.W.E.

AU - Krzywinski, J.

AU - Hau-Riege, S.

AU - Gleeson, A.

AU - Gullikson, E.M.

AU - Bijkerk, F.

PY - 2010

Y1 - 2010

N2 - We investigated single shot damage of Mo/Si multilayer coatings exposed to the intense fs XUV radiation at the Free-electron LASer facility in Hamburg - FLASH. The interaction process was studied in situ by XUV reflectometry, time resolved optical microscopy, and “post-mortem” by interference-polarizing optical microscopy (with Nomarski contrast), atomic force microscopy, and scanning transmission electron microcopy. An ultrafast molybdenum silicide formation due to enhanced atomic diffusion in melted silicon has been determined to be the key process in the damage mechanism. The influence of the energy diffusion on the damage process was estimated. The results are of significance for the design of multilayer optics for a new generation of pulsed (from atto- to nanosecond) XUV sources.

AB - We investigated single shot damage of Mo/Si multilayer coatings exposed to the intense fs XUV radiation at the Free-electron LASer facility in Hamburg - FLASH. The interaction process was studied in situ by XUV reflectometry, time resolved optical microscopy, and “post-mortem” by interference-polarizing optical microscopy (with Nomarski contrast), atomic force microscopy, and scanning transmission electron microcopy. An ultrafast molybdenum silicide formation due to enhanced atomic diffusion in melted silicon has been determined to be the key process in the damage mechanism. The influence of the energy diffusion on the damage process was estimated. The results are of significance for the design of multilayer optics for a new generation of pulsed (from atto- to nanosecond) XUV sources.

U2 - 10.1364/OE.18.000700

DO - 10.1364/OE.18.000700

M3 - Article

SN - 1094-4087

VL - 18

SP - 700

EP - 712

JO - Optics express

JF - Optics express

IS - 2

ER -

Single shot damage mechanism of Mo/Si multilayer optics under intense pulsed XUV-exposures

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