Single-trap kinetic in Si nanowire FETs: Effect of gamma radiation treatment

I. Zadorozhnyi, J. Li, S. Pud, M. Petrychuk, S. Vitusevich*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)

Abstract

Here we report on the effect of gamma radiation treatment on transport properties and single-trap kinetics in Si nanowire (NW) field effect transistor (FET) structures. We used noise spectroscopy as a powerful method for advanced physical characterization of nanoscale devices. Our results demonstrate that transport properties of NW FETs can be changed using small doses of gamma radiation treatment. We reveal an enhancement of the gate coupling effect, which is explained as a result of the reorganization of the native defect structure after treatment. The radiation treatment approach allows the single-trap dynamic to be changed, which opens up prospects for a number of fundamental studies and applications of Si NW FET device structures, including biosensors.

Original languageEnglish
Pages (from-to)3755-3760
Number of pages6
JournalMRS Advances
Volume1
Issue number56
DOIs
Publication statusPublished - 2016
Externally publishedYes

Keywords

  • Electrical properties
  • Nanostructure
  • Sensor

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