Si1-xGex island formation by post-growth anneal on supercritical layers grown by RPCVD

K. Grimm, L. Vescan, L.K. Nanver, C.C.G. Visser, H. Lüth

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

SiGe island layers have been created by post growth anneal on supercritical layers grown at low temperatures (500°C) and high hydrogen pressures (40 Torr). The epitaxial growth has been performed in a commercially available single wafer RPCVD reactor using SiH2Cl2 and GeH4 as precursor gasses. SiGe layers grown under these conditions exceed the critical thickness for the onset of elastic relaxation reported for lower hydrogen pressures as well as the critical thickness for plastic relaxation by more than one order of magnitude. A subsequent anneal step is used to form the islands. This procedure allows some degree of control in the formation of SiGe islands. High island densities and uniform size distributions were achieved. Photoluminescence as well as electroluminescence measurements of these layers show strong emission from SiGe.

Original languageEnglish
Pages (from-to)129-134
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume618
DOIs
Publication statusPublished - 2000
Externally publishedYes

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