Size Dependence of the Magnetic and Electrical Properties of the Spin-Valve Transistor

S.D. Kim, O.M.J. van 't Erve, R. Vlutters, R. Jansen, J.C. Lodder

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    Abstract

    The electrical and magnetic properties of the spin-valve transistor (SVT) are investigated as a function of transistor size. A new fabrication process, designed to study the size dependence of the SVT properties, uses: silicon-on-insulator (SOI) wafers, a combination of ion beam and wet etching and a negative tone photoresist (SU8) as an insulating layer. The Si/Pt emitter and Si/Au collector Schottky barrier height do not depend on the transistor dimensions. The parasitic leakage current of the Si/Au collector is, however, proportional to its area. The relative collector current change with magnetic field is 240%, independent of size, while the transfer ratio starts to decrease for SVTs with an emitter area below 25 25 m2. The maximum input current is found to be limited by the maximum current density allowed in the base (1.7 107A/cm2), which is in agreement with the maximum current density for spin valves.
    Original languageUndefined
    Pages (from-to)847-851
    Number of pages5
    JournalIEEE transactions on electron devices
    Volume49
    Issue number5
    DOIs
    Publication statusPublished - 2002

    Keywords

    • SMI-NE: From 2006 in EWI-NE
    • EWI-5490
    • IR-43261
    • METIS-206223

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