Sm-doping driven state-phase transition and energy storage capability in lead-free Ba(Zr0.35Ti0.65)O3 films

Hien T. Vu; Hung N. Vu; Guus Rijnders; Mihn D. Nguyen

doi:10.1016/j.jallcom.2023.171837

Sm-doping driven state-phase transition and energy storage capability in lead-free Ba(Zr0.35Ti0.65)O3 films

Hien T. Vu^*, Hung N. Vu, Guus Rijnders, Mihn D. Nguyen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

8 Citations (Scopus)

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Abstract

The stability of high energy-storage performance dielectric-film capacitors with respect to frequency, temperature, and cycle number is very essential for developing energy-storage devices. Here, the impact of Sm-doping concentration on the structure and energy-storage stability of lead-free Ba(Zr _0.35Ti _0.65)O ₃ (BZT) films have been systematically investigated. The formation of random electric fields, due to the co-occupying heterovalent ions of Sm ³⁺/Ti ⁴⁺ at the B-sites, serves to enhance the breakdown strength and reduce the polarization reversibility. As a result, an enhanced recoverable energy-storage density of 133.3 J/cm ³ and an excellent energy efficiency of 89.4% are simultaneously achieved in 25 mol% Sm-doped BZT films (BZT-Sm25) under an applied electric field of 7.0 MV/cm. In addition, the BZT-Sm25 films also exhibit outstanding energy-storage performance stability over a large frequency-range of 1–1000 Hz, a wide temperature-range of 25 °C–200 °C, and beyond 10 ¹⁰ switching-cycles, even under a high electric field of 6 MV/cm. These achieved results demonstrate that the Sm-doped BZT films are promising candidates for the development of high-performance and environmentally friendly energy-storage devices.

Original language	English
Article number	171837
Number of pages	9
Journal	Journal of alloys and compounds
Volume	968
Early online date	23 Aug 2023
DOIs	https://doi.org/10.1016/j.jallcom.2023.171837
Publication status	Published - 15 Dec 2023

Keywords

Doping engineering
Paraelectric behavior
Nanodomains
Energy-storage
Lead-free environmentally friendly
2023 OA procedure

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.jallcom.2023.171837

ArticleFinal published version, 4.76 MBLicence: Taverne

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@article{382d96f3c9ab4e37804109dc1141ebfa,

title = "Sm-doping driven state-phase transition and energy storage capability in lead-free Ba(Zr0.35Ti0.65)O3 films",

abstract = "The stability of high energy-storage performance dielectric-film capacitors with respect to frequency, temperature, and cycle number is very essential for developing energy-storage devices. Here, the impact of Sm-doping concentration on the structure and energy-storage stability of lead-free Ba(Zr 0.35Ti 0.65)O 3 (BZT) films have been systematically investigated. The formation of random electric fields, due to the co-occupying heterovalent ions of Sm 3+/Ti 4+ at the B-sites, serves to enhance the breakdown strength and reduce the polarization reversibility. As a result, an enhanced recoverable energy-storage density of 133.3 J/cm 3 and an excellent energy efficiency of 89.4% are simultaneously achieved in 25 mol% Sm-doped BZT films (BZT-Sm25) under an applied electric field of 7.0 MV/cm. In addition, the BZT-Sm25 films also exhibit outstanding energy-storage performance stability over a large frequency-range of 1–1000 Hz, a wide temperature-range of 25 °C–200 °C, and beyond 10 10 switching-cycles, even under a high electric field of 6 MV/cm. These achieved results demonstrate that the Sm-doped BZT films are promising candidates for the development of high-performance and environmentally friendly energy-storage devices.",

keywords = "Doping engineering, Paraelectric behavior, Nanodomains, Energy-storage, Lead-free environmentally friendly, 2023 OA procedure",

author = "Vu, {Hien T.} and Vu, {Hung N.} and Guus Rijnders and Nguyen, {Mihn D.}",

year = "2023",

month = dec,

day = "15",

doi = "10.1016/j.jallcom.2023.171837",

language = "English",

volume = "968",

journal = "Journal of alloys and compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Sm-doping driven state-phase transition and energy storage capability in lead-free Ba(Zr0.35Ti0.65)O3 films

AU - Vu, Hien T.

AU - Vu, Hung N.

AU - Rijnders, Guus

AU - Nguyen, Mihn D.

PY - 2023/12/15

Y1 - 2023/12/15

N2 - The stability of high energy-storage performance dielectric-film capacitors with respect to frequency, temperature, and cycle number is very essential for developing energy-storage devices. Here, the impact of Sm-doping concentration on the structure and energy-storage stability of lead-free Ba(Zr 0.35Ti 0.65)O 3 (BZT) films have been systematically investigated. The formation of random electric fields, due to the co-occupying heterovalent ions of Sm 3+/Ti 4+ at the B-sites, serves to enhance the breakdown strength and reduce the polarization reversibility. As a result, an enhanced recoverable energy-storage density of 133.3 J/cm 3 and an excellent energy efficiency of 89.4% are simultaneously achieved in 25 mol% Sm-doped BZT films (BZT-Sm25) under an applied electric field of 7.0 MV/cm. In addition, the BZT-Sm25 films also exhibit outstanding energy-storage performance stability over a large frequency-range of 1–1000 Hz, a wide temperature-range of 25 °C–200 °C, and beyond 10 10 switching-cycles, even under a high electric field of 6 MV/cm. These achieved results demonstrate that the Sm-doped BZT films are promising candidates for the development of high-performance and environmentally friendly energy-storage devices.

AB - The stability of high energy-storage performance dielectric-film capacitors with respect to frequency, temperature, and cycle number is very essential for developing energy-storage devices. Here, the impact of Sm-doping concentration on the structure and energy-storage stability of lead-free Ba(Zr 0.35Ti 0.65)O 3 (BZT) films have been systematically investigated. The formation of random electric fields, due to the co-occupying heterovalent ions of Sm 3+/Ti 4+ at the B-sites, serves to enhance the breakdown strength and reduce the polarization reversibility. As a result, an enhanced recoverable energy-storage density of 133.3 J/cm 3 and an excellent energy efficiency of 89.4% are simultaneously achieved in 25 mol% Sm-doped BZT films (BZT-Sm25) under an applied electric field of 7.0 MV/cm. In addition, the BZT-Sm25 films also exhibit outstanding energy-storage performance stability over a large frequency-range of 1–1000 Hz, a wide temperature-range of 25 °C–200 °C, and beyond 10 10 switching-cycles, even under a high electric field of 6 MV/cm. These achieved results demonstrate that the Sm-doped BZT films are promising candidates for the development of high-performance and environmentally friendly energy-storage devices.

KW - Doping engineering

KW - Paraelectric behavior

KW - Nanodomains

KW - Energy-storage

KW - Lead-free environmentally friendly

KW - 2023 OA procedure

U2 - 10.1016/j.jallcom.2023.171837

DO - 10.1016/j.jallcom.2023.171837

M3 - Article

SN - 0925-8388

VL - 968

JO - Journal of alloys and compounds

JF - Journal of alloys and compounds

M1 - 171837

ER -

Sm-doping driven state-phase transition and energy storage capability in lead-free Ba(Zr0.35Ti0.65)O3 films

Abstract

Keywords

UN SDGs

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