TY - JOUR
T1 - Small-signal charge transfer inefficiency experiments explained by the McWhorter interface state model
AU - Penning De Vries, René G.M.
AU - Wallinga, Hans
PY - 1984
Y1 - 1984
N2 - The small-signal charge transfer inefficiency (SCTI) of a surface-channel CCD has been studied. The experimentally observed behavior of the SCTI could not be explained by the conventional interface state model. Using the McWhorter model for the interface states, which assumes a distribution of the states in the oxide perpendicular to the interface, an excellent agreement between theory and experiment is obtained. Essentially, this is due to the fact that in the McWhorter model a spectrum of capture cross sections is associated with each energy level. No evidence for the edge effect has been found in devices with a channel width above 50 µm.
AB - The small-signal charge transfer inefficiency (SCTI) of a surface-channel CCD has been studied. The experimentally observed behavior of the SCTI could not be explained by the conventional interface state model. Using the McWhorter model for the interface states, which assumes a distribution of the states in the oxide perpendicular to the interface, an excellent agreement between theory and experiment is obtained. Essentially, this is due to the fact that in the McWhorter model a spectrum of capture cross sections is associated with each energy level. No evidence for the edge effect has been found in devices with a channel width above 50 µm.
KW - IR-56119
U2 - 10.1109/T-ED.1984.21732
DO - 10.1109/T-ED.1984.21732
M3 - Article
SN - 0018-9383
VL - 31
SP - 1454
EP - 1462
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 10
ER -