SOA reduction due to combined electrothermal and avalanche effects in multifinger bipolar transistors

V. D'Alessandro*, L. La Spina, N. Rinaldi, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

The impact of the concurrent action of electrothermal and avalanche effects on the reduction of the safe operating area is experimentally investigated for a wide number of single-, two-, and three-finger bipolar transistors fabricated in SiGe, GaAs, and silicon-on-glass technologies. The analysis is substantiated by a SPICE-like simulation tool that allows monitoring of the temperatures of the individual fingers and provides an in-depth understanding of the separate influence of these positive feedback mechanisms on the device operation.

Original languageEnglish
Title of host publication2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
PublisherIEEE
Pages85-88
Number of pages4
ISBN (Electronic)978-1-4244-2726-0
ISBN (Print)978-1-4244-2725-3
DOIs
Publication statusPublished - 30 Dec 2008
Externally publishedYes
Event2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2008 - Portola Plaza Hotel, Monterey, United States
Duration: 13 Oct 200816 Oct 2008

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)1088-9299
ISSN (Electronic)2378-590X

Conference

Conference2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2008
Abbreviated titleBCTM 2008
CountryUnited States
CityMonterey
Period13/10/0816/10/08

Keywords

  • Breakdown voltage
  • Electrothermal effects
  • Impact ionization
  • Multifinger transistor
  • Safe operating area
  • Thermal resistance

Fingerprint Dive into the research topics of 'SOA reduction due to combined electrothermal and avalanche effects in multifinger bipolar transistors'. Together they form a unique fingerprint.

Cite this