@inproceedings{09384b07eb5e45a3ab2ef9c62da88a33,
title = "SOA reduction due to combined electrothermal and avalanche effects in multifinger bipolar transistors",
abstract = "The impact of the concurrent action of electrothermal and avalanche effects on the reduction of the safe operating area is experimentally investigated for a wide number of single-, two-, and three-finger bipolar transistors fabricated in SiGe, GaAs, and silicon-on-glass technologies. The analysis is substantiated by a SPICE-like simulation tool that allows monitoring of the temperatures of the individual fingers and provides an in-depth understanding of the separate influence of these positive feedback mechanisms on the device operation.",
keywords = "Breakdown voltage, Electrothermal effects, Impact ionization, Multifinger transistor, Safe operating area, Thermal resistance",
author = "V. D'Alessandro and {La Spina}, L. and N. Rinaldi and Nanver, {L. K.}",
year = "2008",
month = dec,
day = "30",
doi = "10.1109/BIPOL.2008.4662718",
language = "English",
isbn = "978-1-4244-2725-3",
series = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",
publisher = "IEEE",
pages = "85--88",
booktitle = "2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting",
address = "United States",
note = "2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2008, BCTM 2008 ; Conference date: 13-10-2008 Through 16-10-2008",
}