Soft breakdown triggers for large area capacitors under constant voltage stress

J. Schmitz; H. J. Kretschmann; H. P. Tuinhout; P. H. Woerlee

doi:10.1109/RELPHY.2001.922932

Soft breakdown triggers for large area capacitors under constant voltage stress

J. Schmitz, H. J. Kretschmann, H. P. Tuinhout, P. H. Woerlee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

45 Downloads (Pure)

Abstract

This work quantitatively compares breakdown triggers for constant voltage stress of large area NMOS capacitors (up to 10 mm²) with 1.8 to 12 nm gate oxide thickness (with negative V_G). We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation (RMS). We also present data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level.

Original language	English
Title of host publication	39th IEEE International Reliability Physics Symposium 2001
Subtitle of host publication	Orlando, Florida, April 30-May 3, 2001
Publisher	IEEE
Pages	393-398
Number of pages	6
ISBN (Print)	0-7803-6587-9, 0-7803-6589-5
DOIs	https://doi.org/10.1109/RELPHY.2001.922932
Publication status	Published - 1 Jan 2001
Externally published	Yes
Event	39th Annual IEEE International Reliability Physics Symposium, IRPS 2001 - Orlando, United States Duration: 30 Apr 2001 → 3 May 2001 Conference number: 39

Conference

Conference	39th Annual IEEE International Reliability Physics Symposium, IRPS 2001
Abbreviated title	IRPS 2001
Country/Territory	United States
City	Orlando
Period	30/04/01 → 3/05/01

Keywords

Breakdown voltage
Capacitors
Carbon capture and storage
Dielectric breakdown
Electric breakdown
Laboratories
MOS devices
Stress
Testing
Time measurement

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/RELPHY.2001.922932

2001_proc_irps_schmitzSubmitted version, 95.8 KBLicence: Unspecified

Cite this

@inproceedings{0fcef609ede248c8adeb74ef63154f32,

title = "Soft breakdown triggers for large area capacitors under constant voltage stress",

abstract = "This work quantitatively compares breakdown triggers for constant voltage stress of large area NMOS capacitors (up to 10 mm2) with 1.8 to 12 nm gate oxide thickness (with negative VG). We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation (RMS). We also present data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level.",

keywords = "Breakdown voltage, Capacitors, Carbon capture and storage, Dielectric breakdown, Electric breakdown, Laboratories, MOS devices, Stress, Testing, Time measurement",

author = "J. Schmitz and Kretschmann, {H. J.} and Tuinhout, {H. P.} and Woerlee, {P. H.}",

year = "2001",

month = jan,

day = "1",

doi = "10.1109/RELPHY.2001.922932",

language = "English",

isbn = "0-7803-6587-9",

pages = "393--398",

booktitle = "39th IEEE International Reliability Physics Symposium 2001",

publisher = "IEEE",

address = "United States",

note = "39th Annual IEEE International Reliability Physics Symposium, IRPS 2001, IRPS 2001 ; Conference date: 30-04-2001 Through 03-05-2001",

}

Schmitz, J, Kretschmann, HJ, Tuinhout, HP & Woerlee, PH 2001, Soft breakdown triggers for large area capacitors under constant voltage stress. in 39th IEEE International Reliability Physics Symposium 2001: Orlando, Florida, April 30-May 3, 2001., 922932, IEEE, pp. 393-398, 39th Annual IEEE International Reliability Physics Symposium, IRPS 2001, Orlando, Florida, United States, 30/04/01. https://doi.org/10.1109/RELPHY.2001.922932

Soft breakdown triggers for large area capacitors under constant voltage stress. / Schmitz, J.; Kretschmann, H. J.; Tuinhout, H. P. et al.
39th IEEE International Reliability Physics Symposium 2001: Orlando, Florida, April 30-May 3, 2001. IEEE, 2001. p. 393-398 922932.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Soft breakdown triggers for large area capacitors under constant voltage stress

AU - Schmitz, J.

AU - Kretschmann, H. J.

AU - Tuinhout, H. P.

AU - Woerlee, P. H.

N1 - Conference code: 39

PY - 2001/1/1

Y1 - 2001/1/1

N2 - This work quantitatively compares breakdown triggers for constant voltage stress of large area NMOS capacitors (up to 10 mm2) with 1.8 to 12 nm gate oxide thickness (with negative VG). We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation (RMS). We also present data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level.

AB - This work quantitatively compares breakdown triggers for constant voltage stress of large area NMOS capacitors (up to 10 mm2) with 1.8 to 12 nm gate oxide thickness (with negative VG). We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation (RMS). We also present data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level.

KW - Breakdown voltage

KW - Capacitors

KW - Carbon capture and storage

KW - Dielectric breakdown

KW - Electric breakdown

KW - Laboratories

KW - MOS devices

KW - Stress

KW - Testing

KW - Time measurement

UR - http://www.scopus.com/inward/record.url?scp=0000902506&partnerID=8YFLogxK

U2 - 10.1109/RELPHY.2001.922932

DO - 10.1109/RELPHY.2001.922932

M3 - Conference contribution

AN - SCOPUS:0000902506

SN - 0-7803-6587-9

SN - 0-7803-6589-5

SP - 393

EP - 398

BT - 39th IEEE International Reliability Physics Symposium 2001

PB - IEEE

T2 - 39th Annual IEEE International Reliability Physics Symposium, IRPS 2001

Y2 - 30 April 2001 through 3 May 2001

ER -

Soft breakdown triggers for large area capacitors under constant voltage stress

Abstract

Conference

Keywords

UN SDGs

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