Soft breakdown triggers for large area capacitors under constant voltage stress

J. Schmitz, H. J. Kretschmann, H. P. Tuinhout, P. H. Woerlee

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)
5 Downloads (Pure)

Abstract

This work quantitatively compares breakdown triggers for constant voltage stress of large area NMOS capacitors (up to 10 mm2) with 1.8 to 12 nm gate oxide thickness (with negative VG). We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation (RMS). We also present data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level.

Original languageEnglish
Title of host publication39th IEEE International Reliability Physics Symposium 2001
Subtitle of host publicationOrlando, Florida, April 30-May 3, 2001
PublisherIEEE
Pages393-398
Number of pages6
ISBN (Print)0-7803-6587-9, 0-7803-6589-5
DOIs
Publication statusPublished - 1 Jan 2001
Externally publishedYes
Event39th Annual IEEE International Reliability Physics Symposium, IRPS 2001 - Orlando, United States
Duration: 30 Apr 20013 May 2001
Conference number: 39

Conference

Conference39th Annual IEEE International Reliability Physics Symposium, IRPS 2001
Abbreviated titleIRPS 2001
CountryUnited States
CityOrlando
Period30/04/013/05/01

Keywords

  • Breakdown voltage
  • Capacitors
  • Carbon capture and storage
  • Dielectric breakdown
  • Electric breakdown
  • Laboratories
  • MOS devices
  • Stress
  • Testing
  • Time measurement

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