Solid state diffusion in multilayered structures on a picometer lengthscale

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Abstract

Multilayered Extreme UV mirrors present unprecedented fundamental questions to solid state diffusion, requiring understanding of diffusion phenomena on length scales of only few picometers. Using x-ray diffraction applied in situ during thermal annealing, we have investigated diffusion processes in Mo/Si multilayers at the very initial stage of compound interface formation. Grazing incidence x-ray reflectometry resolves picometer structural changes in the multilayer structure as a function of time and temperature and reveals diffusion limited compound interface growth. The temperature dependence of the measured diffusion constants exhibits Arrhenius-like diffusion behaviour with an increasing activation energy during interface growth that may explain the range of activation energies reported for this system in literature. The method and results presented here are relevant for understanding and controlling diffusion processes on a picometer length scale, with potential spin-off to semiconductor and other thin film applications.
Original languageEnglish
Pages-
Publication statusPublished - 15 Sep 2012

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solid state
activation energy
grazing incidence
laminates
x ray diffraction
mirrors
temperature dependence
annealing
thin films
x rays
temperature

Keywords

  • METIS-298898
  • IR-103783

Cite this

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title = "Solid state diffusion in multilayered structures on a picometer lengthscale",
abstract = "Multilayered Extreme UV mirrors present unprecedented fundamental questions to solid state diffusion, requiring understanding of diffusion phenomena on length scales of only few picometers. Using x-ray diffraction applied in situ during thermal annealing, we have investigated diffusion processes in Mo/Si multilayers at the very initial stage of compound interface formation. Grazing incidence x-ray reflectometry resolves picometer structural changes in the multilayer structure as a function of time and temperature and reveals diffusion limited compound interface growth. The temperature dependence of the measured diffusion constants exhibits Arrhenius-like diffusion behaviour with an increasing activation energy during interface growth that may explain the range of activation energies reported for this system in literature. The method and results presented here are relevant for understanding and controlling diffusion processes on a picometer length scale, with potential spin-off to semiconductor and other thin film applications.",
keywords = "METIS-298898, IR-103783",
author = "{van de Kruijs}, {Robbert Wilhelmus Elisabeth} and J. Bosgra and S. Bruijn and Andrey Yakshin and Frederik Bijkerk",
year = "2012",
month = "9",
day = "15",
language = "English",
pages = "--",

}

Solid state diffusion in multilayered structures on a picometer lengthscale. / van de Kruijs, Robbert Wilhelmus Elisabeth; Bosgra, J.; Bruijn, S.; Yakshin, Andrey; Bijkerk, Frederik.

2012. -.

Research output: Contribution to conferencePosterOther research output

TY - CONF

T1 - Solid state diffusion in multilayered structures on a picometer lengthscale

AU - van de Kruijs, Robbert Wilhelmus Elisabeth

AU - Bosgra, J.

AU - Bruijn, S.

AU - Yakshin, Andrey

AU - Bijkerk, Frederik

PY - 2012/9/15

Y1 - 2012/9/15

N2 - Multilayered Extreme UV mirrors present unprecedented fundamental questions to solid state diffusion, requiring understanding of diffusion phenomena on length scales of only few picometers. Using x-ray diffraction applied in situ during thermal annealing, we have investigated diffusion processes in Mo/Si multilayers at the very initial stage of compound interface formation. Grazing incidence x-ray reflectometry resolves picometer structural changes in the multilayer structure as a function of time and temperature and reveals diffusion limited compound interface growth. The temperature dependence of the measured diffusion constants exhibits Arrhenius-like diffusion behaviour with an increasing activation energy during interface growth that may explain the range of activation energies reported for this system in literature. The method and results presented here are relevant for understanding and controlling diffusion processes on a picometer length scale, with potential spin-off to semiconductor and other thin film applications.

AB - Multilayered Extreme UV mirrors present unprecedented fundamental questions to solid state diffusion, requiring understanding of diffusion phenomena on length scales of only few picometers. Using x-ray diffraction applied in situ during thermal annealing, we have investigated diffusion processes in Mo/Si multilayers at the very initial stage of compound interface formation. Grazing incidence x-ray reflectometry resolves picometer structural changes in the multilayer structure as a function of time and temperature and reveals diffusion limited compound interface growth. The temperature dependence of the measured diffusion constants exhibits Arrhenius-like diffusion behaviour with an increasing activation energy during interface growth that may explain the range of activation energies reported for this system in literature. The method and results presented here are relevant for understanding and controlling diffusion processes on a picometer length scale, with potential spin-off to semiconductor and other thin film applications.

KW - METIS-298898

KW - IR-103783

M3 - Poster

SP - -

ER -