Spark protection layers for CMOS pixel anode chips in MPGDs

Y. Bilevych, Y. Bilevych, V.M. Blanco Carballo, M.A. Chefdeville, P. Colas, E. Delagnes, M. Fransen, H. van der Graaff, W.J.C. Koppert, J. Melai, Cora Salm, Jurriaan Schmitz, J. Timmermans, J. Timmermans, N. Wyrsch

    Research output: Contribution to journalArticleAcademicpeer-review

    20 Citations (Scopus)

    Abstract

    In this work we have investigated the functioning of high resistivity amorphous silicon and silicon-rich nitride layers as a protection against discharges in Micro-Patterned Gaseous Detectors (MPGDs).When the anode is protected by a high resistivity layer, discharge signals are limited in charge. A signal reduction is expected when the layers are too thick; simulations presented in this paper indicate that layer supto 10 mm thick can be applied without significantly degrading the detector performance. Layers of amorphous silicon and silicon-rich nitride have been deposited on top of Timepix and Medipix 2chips in GridPix detectors; with this, chips survive naturally occurring as well as intentionally produced discharges.
    Original languageUndefined
    Pages (from-to)66-73
    Number of pages8
    JournalNuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment
    Volume629
    Issue number1
    DOIs
    Publication statusPublished - 11 Feb 2011

    Keywords

    • EWI-20196
    • IR-77324
    • METIS-277652

    Cite this