Abstract
Obtaining an accurate profile of the spatial sensitivity of Hall cross structures is crucial if such devices are to be used to analyze the switching behavior of magnetic nanostructures and determine the switching field distribution of bit patterned media. Here, we have used the anomalous Hall effect to investigate the switching of patterned Co/Pt multilayer magnetic nanoislands, where the Hall cross has been integrated into the Pt seed layer. Using the anomalous Hall output voltage we have observed the magnetic switching of individual islands, allowing the spatial sensitivity across a Hall cross structure to be determined. The experimental results agree well with numerical simulation studies, using a three-dimensional finite element model, and with existing theoretical studies, where the spatial sensitivity of two-dimensional Hall cross structures have been found numerically.
Original language | English |
---|---|
Pages (from-to) | 043920 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 108 |
Issue number | 4 |
DOIs | |
Publication status | Published - 31 Aug 2010 |
Keywords
- TST-SMI: Formerly in EWI-SMI
- Magnetic switching
- TST-uSPAM: micro Scanning Probe Array Memory
- TSTNE-Magnet-AHE: Anomalous Hall Effect
- Magnetic recording
- Cobalt
- Finite element analysis (FEA)
- Hall effect
- Nanomagnetics
- Nanostructured materials
- Platinum
- Magnetic multilayers