Spatially Resolved Thermometry of Resistive Memory Devices

Eilam Yalon, Sanchit Deshmukh, Miguel Muñoz Rojo, Feifei Lian, Christopher M. Neumann, Feng Xiong, Eric Pop* (Corresponding Author)

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

18 Citations (Scopus)
8 Downloads (Pure)

Abstract

The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that the combination of Raman thermometry and scanning thermal microscopy (SThM) can enable such measurements with high spatial resolution. We report temperature-dependent Raman spectra of HfO2, TiO2 and Ge2Sb2Te5 (GST) films, and demonstrate direct measurements of temperature profiles in lateral PCM devices. Our measurements reveal that electrical and thermal interfaces dominate the operation of such devices, uncovering a thermal boundary resistance of 28 ± 8 m2K/GW at GST-SiO2 interfaces and an effective thermopower 350 ± 50 μV/K at GST-Pt interfaces. We also discuss possible pathways to apply Raman thermometry and SThM techniques to nanoscale and vertical resistive memory devices.

Original languageEnglish
Article number15360
JournalScientific reports
Volume7
Issue number1
DOIs
Publication statusPublished - 10 Nov 2017
Externally publishedYes

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    Yalon, E., Deshmukh, S., Muñoz Rojo, M., Lian, F., Neumann, C. M., Xiong, F., & Pop, E. (2017). Spatially Resolved Thermometry of Resistive Memory Devices. Scientific reports, 7(1), [15360]. https://doi.org/10.1038/s41598-017-14498-3