Abstract
The spatioselective functionalization of silicon microwires with axial p/n junctions is achieved using the electronic properties of the junction. (Photo)electrochemical deposition of metals is demonstrated at the bottom and top of the wires in the dark and light, respectively. The junction depletion layer remains unmodified, which allows its visualization and comparison with theoretical calculations.
Original language | English |
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Pages (from-to) | 1400-1405 |
Number of pages | 6 |
Journal | Advanced materials |
Volume | 28 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2016 |
Keywords
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