Special RF/microwave devices in silicon-on-glass technology

L. K. Nanver, H. Schellevis, T.L.M. Scholtes, L. La Spina, G. Lorito, F. Sarubbi, V. Gonda, M. Popadić, K. Buisman, L.C.N. de Vreede, C. Huang, S. Milosavljević, E.J.G. Goudena

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)


This paper reviews special RF/microwave silicon device implementations in the back-wafer contacted Silicon-On-Glass (SOG) Substrate-Transfer Technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the resistive/capacitive parasitics of the silicon devices can be minimized by a direct two-sided contacting. Focus is placed here on the device level aspects of the SOG process. In particular, complementary bipolar device integration and high-quality varactors for high-linearity adaptive circuits are treated in relationship to developments in back-wafer contacting and the integration of AlN heatspreaders.

Original languageEnglish
Title of host publication2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Number of pages8
Publication statusPublished - 30 Dec 2008
Externally publishedYes
Event2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2008 - Portola Plaza Hotel, Monterey, United States
Duration: 13 Oct 200816 Oct 2008


Conference2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2008
Abbreviated titleBCTM 2008
Country/TerritoryUnited States


  • Adaptive circuits
  • Aluminum nitride deposition
  • Complementary bipolar silicon technology
  • Silicon-on-glass technology
  • Substrate transfer
  • Thin-film heatspreading
  • Varactors


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