Special RF/microwave devices in silicon-on-glass technology

L.K. Nanver; H. Schellevis; T.L.M. Scholtes; L. La Spina; G. Lorito; F. Sarubbi; V. Gonda; M. Popadić; K. Buisman; L.C.N. de Vreede; C. Huang; S. Milosavljević; E.J.G. Goudena

doi:10.1109/BIPOL.2008.4662707

Special RF/microwave devices in silicon-on-glass technology

L.K. Nanver
, H. Schellevis
, T.L.M. Scholtes
, L. La Spina
, G. Lorito
, F. Sarubbi
, V. Gonda
, M. Popadić
, K. Buisman
, L.C.N. de Vreede
, C. Huang
, S. Milosavljević
, E.J.G. Goudena

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

Abstract

This paper reviews special RF/microwave silicon device implementations in the back-wafer contacted Silicon-On-Glass (SOG) Substrate-Transfer Technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the resistive/capacitive parasitics of the silicon devices can be minimized by a direct two-sided contacting. Focus is placed here on the device level aspects of the SOG process. In particular, complementary bipolar device integration and high-quality varactors for high-linearity adaptive circuits are treated in relationship to developments in back-wafer contacting and the integration of AlN heatspreaders.

Original language	English
Title of host publication	2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Pages	33-40
Number of pages	8
DOIs	https://doi.org/10.1109/BIPOL.2008.4662707
Publication status	Published - 30 Dec 2008
Externally published	Yes
Event	2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2008 - Portola Plaza Hotel, Monterey, United States Duration: 13 Oct 2008 → 16 Oct 2008

Conference

Conference	2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2008
Abbreviated title	BCTM 2008
Country/Territory	United States
City	Monterey
Period	13/10/08 → 16/10/08

Keywords

Adaptive circuits
Aluminum nitride deposition
Complementary bipolar silicon technology
Silicon-on-glass technology
Substrate transfer
Thin-film heatspreading
Varactors

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10.1109/BIPOL.2008.4662707

Cite this

Nanver, L. K., Schellevis, H., Scholtes, T. L. M., La Spina, L., Lorito, G., Sarubbi, F., Gonda, V., Popadić, M., Buisman, K., de Vreede, L. C. N., Huang, C., Milosavljević, S., & Goudena, E. J. G. (2008). Special RF/microwave devices in silicon-on-glass technology. In 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 33-40). Article 4662707 https://doi.org/10.1109/BIPOL.2008.4662707

@inproceedings{3ee5e3eb74444ea9b182c0108121e378,

title = "Special RF/microwave devices in silicon-on-glass technology",

abstract = "This paper reviews special RF/microwave silicon device implementations in the back-wafer contacted Silicon-On-Glass (SOG) Substrate-Transfer Technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the resistive/capacitive parasitics of the silicon devices can be minimized by a direct two-sided contacting. Focus is placed here on the device level aspects of the SOG process. In particular, complementary bipolar device integration and high-quality varactors for high-linearity adaptive circuits are treated in relationship to developments in back-wafer contacting and the integration of AlN heatspreaders.",

keywords = "Adaptive circuits, Aluminum nitride deposition, Complementary bipolar silicon technology, Silicon-on-glass technology, Substrate transfer, Thin-film heatspreading, Varactors",

author = "L.K. Nanver and H. Schellevis and T.L.M. Scholtes and \{La Spina\}, L. and G. Lorito and F. Sarubbi and V. Gonda and M. Popadi{\'c} and K. Buisman and \{de Vreede\}, L.C.N. and C. Huang and S. Milosavljevi{\'c} and E.J.G. Goudena",

year = "2008",

month = dec,

day = "30",

doi = "10.1109/BIPOL.2008.4662707",

language = "English",

isbn = "9781424427260",

pages = "33--40",

booktitle = "2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting",

note = "2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2008, BCTM 2008 ; Conference date: 13-10-2008 Through 16-10-2008",

}

Nanver, LK, Schellevis, H, Scholtes, TLM, La Spina, L, Lorito, G, Sarubbi, F, Gonda, V, Popadić, M, Buisman, K, de Vreede, LCN, Huang, C, Milosavljević, S & Goudena, EJG 2008, Special RF/microwave devices in silicon-on-glass technology. in 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting., 4662707, pp. 33-40, 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2008, Monterey, California, United States, 13/10/08. https://doi.org/10.1109/BIPOL.2008.4662707

TY - GEN

T1 - Special RF/microwave devices in silicon-on-glass technology

AU - Nanver, L.K.

AU - Schellevis, H.

AU - Scholtes, T.L.M.

AU - La Spina, L.

AU - Lorito, G.

AU - Sarubbi, F.

AU - Gonda, V.

AU - Popadić, M.

AU - Buisman, K.

AU - de Vreede, L.C.N.

AU - Huang, C.

AU - Milosavljević, S.

AU - Goudena, E.J.G.

PY - 2008/12/30

Y1 - 2008/12/30

N2 - This paper reviews special RF/microwave silicon device implementations in the back-wafer contacted Silicon-On-Glass (SOG) Substrate-Transfer Technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the resistive/capacitive parasitics of the silicon devices can be minimized by a direct two-sided contacting. Focus is placed here on the device level aspects of the SOG process. In particular, complementary bipolar device integration and high-quality varactors for high-linearity adaptive circuits are treated in relationship to developments in back-wafer contacting and the integration of AlN heatspreaders.

AB - This paper reviews special RF/microwave silicon device implementations in the back-wafer contacted Silicon-On-Glass (SOG) Substrate-Transfer Technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the resistive/capacitive parasitics of the silicon devices can be minimized by a direct two-sided contacting. Focus is placed here on the device level aspects of the SOG process. In particular, complementary bipolar device integration and high-quality varactors for high-linearity adaptive circuits are treated in relationship to developments in back-wafer contacting and the integration of AlN heatspreaders.

KW - Adaptive circuits

KW - Aluminum nitride deposition

KW - Complementary bipolar silicon technology

KW - Silicon-on-glass technology

KW - Substrate transfer

KW - Thin-film heatspreading

KW - Varactors

UR - https://www.scopus.com/pages/publications/57949084498

U2 - 10.1109/BIPOL.2008.4662707

DO - 10.1109/BIPOL.2008.4662707

M3 - Conference contribution

AN - SCOPUS:57949084498

SN - 9781424427260

SP - 33

EP - 40

BT - 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

T2 - 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2008

Y2 - 13 October 2008 through 16 October 2008

ER -

Special RF/microwave devices in silicon-on-glass technology

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Keywords

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